journal article·2009-06

Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition

Shuzhen Yu, Guoqing Miao, Yixin Jin, Tiemin Zhang, Hang Song, Hong Jiang, Zhiming Li, Dabing Li, Xiaojuan Sun

Journal of Alloys and Compounds· Volume 479· Issue 1-2
Publisher page

Abstract

Abstract Catalyst-free InP nanowires were grown on Si (1 0 0) substrates by metal organic chemical vapor deposition. In this method, in situ deposited In droplets are seeds of the InP nanowires growth. In order to control the growth of epitaxial InP nanowires, a detailed investigation on the growth related aspects such as the In droplets deposition time, growth temperature, and V/III ratio has been made. The experimental results indicate that the diameter, shape, and length of the nanowires can be controlled by growth conditions.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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