Simulation Study of Short Channel Effects in New Hemispherical Gate-All-Around (HGAA) MOS Devices
Source abstract
Abstract
This work presents a numerical simulation study of short-channel effect (SCE) in new hemispherical gate-all-around (HGAA) MOS devices. These new HGAA architectures enable the optimization of the gate-electrostatic control of simple GAA MOS devices after rounding their channel’s edges to a well-defined radius of curvature. The simulation results indicate that the short-channel effects (SCEs) measured in terms of subthreshold swing SS and DIBL can be significantly improved in HGAA structures with a smaller silicon curvature radius. It is also found that the gate silicon surface area can be analytically calculated using the Pappus–Guldin theorem and used to model the gate oxide capacitance of such HGAA MOS devices. Pure spherical HGAA structures are also simulated and compared to simple HGAA structures, revealing their excellent performance in terms of SCE, making them an optimal 3D geometry architecture for CMOS integration with the best electrostatic control.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Electrostatic Discharge in Electronics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
CROMA, Grenoble INP-Minatec, CNRS, University Grenoble Alpes, Parvis Louis Neel, 38000 Grenoble, France
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