Neuromorphic coprocessor prototype based on mixed metal oxide memristors

This paper presents developments in the field of nanoscale neuromorphic electronics. The developed device represents the integration of the memristive crossbar with commercially available electronics. The crossbar was deposited by PVD assisted by electron-beam lithography. The 20 nm mixed titanium-aluminium oxide film was used as a memristive layer in the crossbar. The device was developed as a complex consisting of two microcontrollers bound by I2C interface and connected to a PC via USB. The software consists of the neural network part implemented on microcontrollers and the control part installed on PC.