journal article·2026-01-05Open access

Influence of Structural Parameters on Thermal Stress and Performance of High-Temperature SiGe Thermoelectric Modules

Zhenghao Liu, Heng Yan, Jing Li, Xiaoxi Chen, Hang Jing, Yingzeng Zhang, Qingpei Xiang, Mingyang Ma

Applied Sciences· Volume 16· Issue 1

Abstract

Mechanical and thermoelectric performance of a SiGe thermoelectric module were investigated through finite element analysis. N-type and P-type SiGe thermoelectric materials were synthesized, and their mechanical and thermoelectric properties were experimentally measured. Thermal stress distributions within the SiGe module and the integrated “heat collector–module–heat sink” assembly are simulated, and the results were compared with the measured mechanical strength of the SiGe materials. The simulations show that among the three electrode structures evaluated—C/W/C sandwich, 0.5 mm W/C, and 0.1 mm W/C—the C/W/C sandwich configuration yields the lowest thermal stress. An inter-leg spacing of 0.5 mm also leads to reduced stress compared to a 0.1 mm gap. However, fully constraining the cold end or directly integrating the module with heat collection and dissipation components significantly increases thermal stress. The use of copper cooling plates induces higher stress than C-C plates, exceeding the tolerable strength of the materials. Simulation of a module with 28 SiGe legs (each 10 mm × 10 mm × 1.5 mm) predicts an output power of 7.42 W and a conversion efficiency of 7.11% at a hot-side temperature of 967 °C and a cold-side temperature of 412 °C.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Silicon Carbide Semiconductor Technologies · 3D IC and TSV technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China

Funding

National Natural Science Foundation of China · Presidential Foundation of CAEP

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