Effect of AgNO_{3 concentration on structure of aligned silicon nanowire arrays fabricated via silver-assisted chemical etching

In this paper we present a systematic study of the effect of AgNO3 concentration in HF/AgNO3 aqueous solution on the structure and properties of the aligned silicon nanowire (SiNW) arrays. The results showed that morphology and properties of aligned SiNW arrays depend strongly on AgNO3 concentration. The size of Si nanowires is uniform over large area with the diameter in the region of 100–160 nm and the length in the region of 5–12 µm. When the AgNO3 concentration is large enough, the reflection coefficient of SiNW arrays is less than 2%.