Radiation Hardness of Oxide Thin Films Prepared by Magnetron Sputtering Deposition
Source abstract
Abstract
Thin amorphous oxide films (a-SiO2, a-Al2O3, a-MgO) were prepared by magnetron sputtering deposition. Their response to high-energy heavy ion beams (23 MeV I, 18 MeV Cu, 2.5 MeV Cu) and gamma-ray (1.25 MeV) irradiation was studied by elastic recoil detection analysis and infrared spectroscopy. It was established that their high radiation hardness is due to a high level of disorder, already present in as-prepared samples, so the high-energy heavy ion irradiation cannot change their structure much. In the case of a-SiO2, this resulted in a completely different response to high-energy heavy ion irradiation found previously in thermally grown a-SiO2. In the case of a-MgO, only gamma-ray irradiation was found to induce significant changes.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Metal and Thin Film Mechanics · High-Temperature Coating Behaviors · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Medicine, University of Zagreb, Šalata 3, 10000 Zagreb, Croatia
Ruđer Bošković Institute, Bijenička Cesta 54, 10000 Zagreb, Croatia
Funding
Croatian Science Foundation · European Regional Development Fund
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