Studies on Ga_{2O_{3 thin films subjected to post-deposition annealing in argon ambient

The effects of radio frequency (RF) magnetron sputtered Ga2O3 thin films subjected to different post-deposition annealing temperatures at 400, 600, 800 and 1000°C for 60 min in argon ambient were investigated. The grazing incidence X-ray diffraction had discovered that an amorphous Ga2O3 thin film was formed during post-deposition annealing at 400°C. The detection of polycrystalline β-Ga2O3 phase was observed when the Ga2O3 thin films were annealed at/beyond 600°C, wherein an improvement in crystallinity was attained as the post-deposition annealing temperature was increased from 600°C to 1000°C. Nevertheless, the employment of the highest post-deposition annealing temperature at 1000°C has triggered an excessive diffusion of oxygen anions to the interface contributing to the formation of the thickest SiO2interfacial layer. It was determined that Ga2O3 thin film annealed at 1000°C had attained the lowest leakage density when compared with the Ga2O3 thin films annealed at lower temperatures.