Study on Single-Event Transient Hardness of Semi-Enclosed Gate NMOS
Source abstract
Abstract
Based on the simulation software, single-event transient (SET) simulations were conducted on semi-enclosed gate NMOS devices. The simulation involved bombarding the semi-enclosed gate NMOS devices with heavy ions under specific conditions. A comparative analysis was conducted to evaluate the single-event transient tolerance of traditional NMOS and semi-enclosed gate NMOS. Simulation curves from transient to steady-state states under different Linear Energy Transfer (LET) values, as well as potential distribution and current density distribution maps following heavy ion bombardment, were analyzed. Furthermore, single-event transient simulations were carried out on inverters composed of both NMOS types, with subsequent analysis. The results ultimately demonstrate that the semi-enclosed gate NMOS exhibits superior single-event transient tolerance compared to conventional NMOS.
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Research context
OpenAlex topics: Radiation Effects in Electronics · Semiconductor materials and devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Hunan Provincial Natural Science Foundation
References (35)
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