Study on nanoparticles embedded multilayer gate dielectric MOS non-volatile memory devices

Here, we present a computational study on stacked multilayer nanoparticles embedded gate dielectric MOS non-volatile memory devices. Two device structures, one with a pure SiO2 tunnel oxide and other with a stacked HfO2-SiO2 tunnel oxide were compared. The Au nanocrystals were assumed embedded in a Si3N4 layer. The electrical parameters of the composite multilayer were evaluated using Maxwell-Garnett theory and virtual crystal approximation. From the WKB approximation, the direct and the Fowler-Nordheim tunnelling currents were evaluated, and subsequently the I-V characteristics and the flatband voltage shifts were also simulated. The flatband shift simulations were compared with recent experimental results.