A Study on Heater Design for Crystal Growth of GaAs Ingot Using Growth Temperature Simulation
Source abstract
Abstract
In this work, a study on large-diameter GaAs ingot growth is presented. Optimized temperature control technology is developed. Horizontal and vertical temperature application technologies with optimum conditions are investigated. The design result is verified through thermal analysis. In addition, polishing process technology for large-diameter GaAs substrates is developed. Simulation data were used to carry out experiments to determine the optimum temperature conditions. As a result of the defect analysis, the final manufacturing result is found to have excellent thickness variations. This presents the validity of the manufacturing process developed in this work.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Thin-Film Transistor Technologies · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
IOG Semiconductor, Inc., KETI #413, 111, Ballyong-ro, Deokjin-gu, Jeonju 54853, Republic of Korea
Department of Mechanical Engineering, Kunsan National University, 558 Daehak-ro, Miryong-dong, Gunsan 54150, Republic of Korea
Funding
Korea Institute for Advancement of Technology (KIAT) · Korea Basic Science Institute (National Research Facilities and Equipment Center)
References (16)
Show source-provided references
1. Gallium arsenide as a mechanical material10.1088/0960-1317/4/1/001 ↗
2. Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots10.1016/0169-4332(91)90222-6 ↗
3. Growth of GaAs ingots with high free electron concentrations10.1016/0022-0248(80)90004-4 ↗
4. Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy10.1038/s41467-019-11341-3 ↗
5. Dropka, N., Böttcher, K., and Holena, M. (2021). Development and optimization of VGF-GaAs crystal growth process using data mining and machine learning techniques. Crystals, 11.10.3390/cryst11101218 ↗
6. Wide-bandgap perovskite/gallium arsenide tandem solar cells10.1002/aenm.201903085 ↗
7. Numerical simulation of the growth of 2″ diameter GaAs crystals by the vertical gradient freeze technique10.1016/S0022-0248(97)00254-6 ↗
8. Growth of 3″ and 4″ gallium arsenide crystals by the vertical gradient freeze (VGF) method10.1016/S0022-0248(99)00832-5 ↗
9. Computer-assisted growth of low-EPD GaAs with 3″ diameter by the vertical gradient-freeze technique10.1016/S0022-0248(98)01220-2 ↗
10. Nikola, N., Dallaev, R., Talu, S., and Kastyl, J. (2021). Overview of the current ctate of gallium arsenide-based solar cells. Material, 14.10.3390/ma14113075 ↗
11. Electrochemical synthesis of silicon and gallium arsenide photovoltaic thin films: A critical review and a novel approach10.4028/www.scientific.net/MSF.1008.84 ↗
12. Accelerated VGF-crystal growth of GaAs under traveling magnetic fields10.1016/j.jcrysgro.2013.01.017 ↗
13. The influence of the scatter of heat flux at the m/c interface on the frequency of appearance of poly body and twin defects during 6″ semi-insulating GaAs crystal growth by the VGF method10.1016/j.jcrysgro.2007.11.146 ↗
14. Mn contribution to the valence band of Ga0.98Mn0.02Sb—A photoemission study10.12693/APhysPolA.141.175 ↗
15. Large-depth defect profiling in GaAs wafers after saw cutting10.1016/S0169-4332(99)00192-0 ↗
16. On optical properties and scintillation performance of emerging Ga2O3: Crystal growth, emission mechanisms and doping strategies10.1016/j.materresbull.2021.111494 ↗