Properties of Spatially Indirect Excitons in Nanowire Arrays
Source abstract
Abstract
This paper deals with the excitons formed by electrons and holes located in different, closely placed semiconducting nanowires (spatially indirect excitons). We calculated the charge densities and the binding energies of the excitons for different nanowire diameters D and distances h between the nanowires. Together with the estimated exciton lifetimes, these results suggest that at certain h and D, the spatially indirect excitons in the nanowire arrays may have the potential to serve as information-processing units. Possible ways of exciton generation in the nanowire arrays are discussed.
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Space Research Institute, Russian Academy of Sciences (IKI), 84/32 Profsoyuznaya Str., 117997 Moscow, Russia
Linacre College, University of Oxford, St. Cross Road, Oxford OX1 3JA, UK
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