journal article·2022-09-12Open access

Experimental Comparison of the Single-Event Effects of Single-Photon and Two-Photon Absorption under a Pulsed Laser

Heng An, Detian Li, Xuan Wen, Shengsheng Yang, Chenguang Zhang, Jun Wang, Zhou Cao

Applied Sciences· Volume 12· Issue 18

Abstract

The pulsed laser has gradually become the standard method of studying the single-event effects of micro-nano devices, and it is a powerful supplement to heavy ion experiments on single-event effects. In particular, with the continuous improvement of the technological range and operating frequency of electronic devices, the femtosecond pulse laser has the potential for broad applications and practical value in the single-event effects testing and radiation hardness evaluations of devices. The single-event effects of single-photon and two-photon absorption were studied with a laser of 1064 nm and 1260 nm, and the influences of SPA (single-photon absorption) and TPA (two-photon absorption) on the single-event transient voltage under different pulse laser energies were analyzed. The test results of the TPA SEE (single-event effect) were basically consistent with those of the SPA SEE, and the trend of the change in the transient voltage pulse was consistent. These results lay a foundation for the application of the femtosecond pulse laser in the performance evaluation and screening of space electronic devices and the radiation hardness evaluation of satellite electronic systems.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Radiation Effects in Electronics · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China

Funding

the National Natural Science Foundation of China

References (12)

Show source-provided references
1. Subbandgap laser-induced single event effects: Carrier Generation via Two-Photon Absorption10.1109/TNS.2002.805337 ↗
2. Direct Comparison of Charge Collection in SOI Devices from Single-Photon and Two-Photon Laser Testing Techniques10.1109/TNS.2011.2128345 ↗
3. A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements10.1109/TNS.2014.2369006 ↗
4. Simulation test study of single event transient effect for high speed PWM with pulse laser10.3788/IRLA20190533 ↗
5. Demonstration of single-event effects induced by throughwafer two-photon absorption10.1109/TNS.2004.839106 ↗
6. Study of single event burning and grating penetration effect using 252Cf source
7. A single-event-hardened phase-locked loop fabricated in 130 nm CMOS10.1109/TNS.2007.908166 ↗
8. Simulation and Experimental Study on Internal Charge-discharge Characteristics of Dielectric Materials
9. Laser-Induced Current Transients in Silicon-GermaniumHBTs10.1109/TNS.2008.2007954 ↗
10. 80C86 single event effect measurement system and experimental study
11. Pulsed-Laser Testing for Single-Event Effects Investigations10.1109/TNS.2013.2255312 ↗
12. Simulation of Laser-Based Two-Photon AbsorptionInduced Charge Carrier Generation in Silicon10.1109/TNS.2015.2422793 ↗