GaN-Based Readout Circuit System for Reliable Prompt Gamma Imaging in Proton Therapy
Source abstract
Abstract
Prompt gamma imaging is one of the emerging techniques used in proton therapy for in-vivo range verification. Prompt gamma signals are generated during therapy due to the nuclear interaction between beam particles and nuclei of the tissue that is detected and processed in order to obtain the position and energy of the event so that the benefits of Bragg’s peak can be fully utilized. This work aims to develop a gallium nitride (GaN)-based readout system for position-sensitive detectors. An operational amplifier is the module most used in such a system to process the detector signal, and a GaN-based operational amplifier (OPA) is designed and simulated in LTSpice. The designed circuit had an open-loop gain of 70 dB and a unity gain frequency of 34 MHz. The slew rate of OPA was 20 V/μs and common mode rejection ratio was 84.2 dB. A simulation model of the readout circuit system using the GaN-based operational amplifier was also designed, and the result showed that the system can successfully process the prompt gamma signals. Due to the radiation hardness of GaN devices, the readout circuit system is expected to be more reliable than its silicon counterpart.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Radiation Detection and Scintillator Technologies · Radiation Effects in Electronics · Radiation Therapy and Dosimetry
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Reliability Science and Technology, Chang Gung University, Wenhua 1st Road, Guishan Dist., Taoyuan City 33302, Taiwan
Department of Electronic Engineering, Chang Gung University, Wenhua 1st Rd., Guishan Dist., Taoyuan City 33302, Taiwan
Center for Reliability Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
Department of Urology, Chang Gung Memorial Hospital, Guishan, Taoyuan City 33302, Taiwan
Funding
Chang Gung University
References (45)
Show source-provided references
1. Mukherji, A. (2018). Particle Beam Therapy: A Quick View. Basics of Planning and Management of Patients During Radiation Therapy, Springer.10.1007/978-981-10-6659-7 ↗
2. The available evidence points to benefits of proton beam therapy
3. Proton Therapy—Present and Future10.1016/j.addr.2016.11.006 ↗
4. Monitoring proton therapy with PET10.1259/bjr.20150173 ↗
5. Prompt gamma detection for range verification in proton therapy10.1016/j.cap.2011.07.027 ↗
6. Wronska, A., and Dauvergne, D. (2020). Range verification by means of prompt-gamma detection in particle therapy. Radiation Detection Systems, CCSD. hal-03085504.10.1201/9781003218364-6 ↗
7. Development of a Compton camera for prompt-gamma medical imaging10.1016/j.radphyschem.2017.01.024 ↗
8. Use of a LYSO-based Compton camera for prompt gamma range verification in proton therapy10.1002/mp.12626 ↗
9. A QTC-based signal readout for position-sensitive multi-output detectors10.1007/s41365-016-0124-4 ↗
10. Design and development of compact readout electronics with silicon photomultiplier array for a compact imaging detector10.1088/1674-1137/36/10/010 ↗
11. Aloufi, K. (2016). Neutron Spectroscopy in Proton Therapy, University College of London.
12. Secondary neutron and photon dose in proton therapy10.1016/S0167-8140(98)00049-8 ↗
13. Evaluation and Mitigation of Secondary Dose Delivered to Electronic Systems in Proton Therapy10.1177/1533034614567369 ↗
14. The impact of neutrons in clinical proton therapy10.3389/fonc.2015.00235 ↗
15. Experimental study of neutron irradiation effect on elementary semiconductor devices using Am-Be neutron source
16. A typical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits10.1109/TNS.2017.2772901 ↗
17. Degradation of Instrumentation Amplifiers Due to the Nonionizing Energy Loss Damage10.1109/TNS.2003.820628 ↗
18. Neutron effects on short circuit currents of Op Amps and consequences10.1109/TNS.2005.855817 ↗
19. Synergistic effect of mixed neutron and gamma irradiation in bipolar operational amplifier OP0710.1016/j.nima.2016.05.072 ↗
20. Radiation and annealing effects on integrated bipolar Operational Amplifier10.1016/j.radphyschem.2016.11.002 ↗
21. Boley, W.R. (2008, January 14–18). Compendia of TID and neutron radiation test results of selected COTS parts. Proceedings of the 2008 IEEE Radiation Effects Data Workshop, Tucson, AZ, USA.10.1109/REDW.2008.32 ↗
22. Amir, H.F.A., Chee, F.P., and Salleh, S. (2014, January 27–28). Effects of high energy neutrons and resulting secondary charged particles on the operation of MOSFETs. Proceedings of the 2014 International Conference on Computational Science and Technology, ICCST, Kota Kinabalu, Malaysia.10.1109/ICCST.2014.7045179 ↗
23. Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs10.7567/1347-4065/aafc9b ↗
24. Neutron radiation effects on metal oxide semiconductor (MOS) devices10.1016/j.nimb.2009.06.051 ↗
25. Makowski, D. (2006). The Impact of Radiation on Electronic Devices with Special Consideration of Neutron and Gamma Radiation Monitoring, Technical University of Lodz.
26. Haider, F.A., Chee, F.P., Abu Hassan, H., Saafie, S., and Afishah, A. (2016, January 22). Changes in electrical properties of MOS transistor induced by single 14 MeV neutron. Proceedings of the AIP Conference Proceedings, Online.10.1063/1.4940111 ↗
27. Vaidya, S.J., Sharma, D.K., and Chandorkar, A.N. (2003, January 11). Neutron induced oxide degradation in MOSFET structures. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2003, Singapore.
28. (2021, April 11). Angela Chen Gallium Nitride is the Silicon of the Future. Available online: https://www.theverge.com/2018/11/1/18051974/gallium-nitride-anker-material-silicon-semiconductor-energy#:~:text=GaN has a wider band,on GaN in power electronics.
29. (2021, April 12). Where is GaN Going?. Available online: https://epc-co.com/epc/GalliumNitride/whereisgangoing.aspx.
30. Scharf, A. (2016). Gallium Nitride is Moving Forward, Power Electronics Europe.
31. Zafrani, M. (2020). Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices, EE Power.
32. Radiation resistance of wide-bandgap semiconductor power transistors
33. Cha, S., Chung, Y.H., Wojtowwicz, M., Smorchkova, I., Allen, B.R., Yang, J.M., and Kagiwada, R. (2004, January 6–11). Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics. Proceedings of the IEEE MTT-S International Microwave Symposium Digest, Fort Worth, TX, USA.
34. Pengelly, R., Sheppard, S., Smith, T., Pribble, B., Wood, S., and Platis, C. (2011, January 16–19). Commercial Gan devices for switching and low noise applications. Proceedings of the 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011, Palm Springs, CA, USA.
35. Helali, A., Gassoumi, M., Gassoumi, M., and Maaref, H. (2020). Design and Optimization of LNA Amplifier Based on HEMT GaN for X-Band Wireless-Communication and IoT Applications. Silicon, 1–9.10.1007/s12633-020-00626-8 ↗
36. Application of Gallium Nitride Technology in Particle Therapy Imaging10.1109/TNS.2021.3072654 ↗
37. Zafrani, M., and Lidow, A. (2021, April 26). Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices. Available online: https://epc-co.com/epc/EventsandNews/News/ArtMID/1627/ArticleID/2933/Radiation-Performance-of-Enhancement-Mode-Gallium-Nitride-Power-Devices.aspx.
38. Lidow, A., and Smalley, K. (2012, January 19–22). Radiation Tolerant Enhancement Mode Gallium Nitride ( eGaN ®) FET Characteristics. Proceedings of the GOMAC Tech Conference, Las Vegas, NV, USA.
39. Lidow, A., Nakata, A., Rearwin, M., Strydom, J., and Zafrani, A.M. (2014, January 14–18). Single-event and radiation effect on enhancement mode gallium nitride FETs. Proceedings of the IEEE Radiation Effects Data Workshop, Paris, France.10.1109/REDW.2014.7004594 ↗
40. Simple charge division readouts for imaging scintillator arrays using a multi-channel PMT10.1109/23.507162 ↗
41. (2021, March 22). Slew Rate. Available online: https://training.ti.com/system/files/docs/1221-Slew Rate 1-slides.pdf.
42. Simulation of silicon photomultiplier signals10.1109/TNS.2009.2030728 ↗
43. Massari, R., Soluri, A., Caputo, D., and Ronchi, S. (2015, January 18–19). Low power readout circuits for large area silicon photomultiplier array. Proceedings of the 6th International Workshop on Advances in Sensors and Interfaces (IWASI), Gallipoli, Italy.10.1109/IWASI.2015.7184962 ↗
44. Compact readout electronics for Position Sensitive Photomultiplier Tubes
45. Position Error Correction Using Homography in Discretized Positioning Circuit for Gamma-Ray Imaging Detection System10.1109/TNS.2016.2639532 ↗