Modeling of curvature in multilayered epitaxially grown films
Source abstract
Abstract
A model was developed to calculate the radius of curvature produced by stresses in lattice-mismatched multilayers grown epitaxially on a planar substrate. The analysis was done for any number (N) of layers using beam bending theory and strain partitioning theory introduced by our group earlier. This model is reduced to a limiting case of a two-layer structure (film-substrate). The variation of the radius of curvature with the relative thicknesses and other material properties of the layers was determined and compared to finite element calculations. The analytical model was further verified by applying it to a symmetric tri-laminate structure.
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Research context
OpenAlex topics: Adhesion, Friction, and Surface Interactions · Electronic Packaging and Soldering Technologies · Fluid Dynamics and Thin Films
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References (25)
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