Preliminary Study on Detecting the Internal Voltage Values of Integrated Circuits Based on Electro-Optical Frequency Mapping
Source abstract
Abstract
Electro-optical frequency mapping (EOFM) technology can detect node signals from the backside of integrated circuits (ICs). In the past, the detected signal only qualitatively represented the electrical activity strength inside the device. In this paper, the electro-optical signal generation mechanism of the device is systematically studied, and a concise physical model of laser beam modulation based on the optical transmission matrix is proposed. Firstly, the influence of the bandwidth of the laser and each structure covered by the laser spot on the electro-optical signal of the device is well described by the model. Secondly, the model quantifies the electro-optical signal strength, and shows it is positively correlated with the laser wavelength and the reverse bias voltage. Finally, the model is used to quantitatively calculate the accurate voltage level of the internal node inside the device using the detected signal, and the calculation results match well with the experimental results. The model provides theoretical guidance for the efficient and accurate extraction of internal voltage values of devices by EOFM technology.
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Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Force Microscopy Techniques and Applications · Near-Field Optical Microscopy
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
School of Astronomy and Space Science, University of Chinese Academy of Sciences, Beijing 100049, China
Funding
Foundation for Study Encouragement to Youth Innovation Promotion Association Member of Chinese Academy of Sciences · Research and Development Plan Projects in Key Area of Guangdong Province
References (28)
Show source-provided references
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