Special Issue “Fundamentals and Recent Advances in Epitaxial Graphene on SiC”
Source abstract
Abstract
The aim of this Special Issue is to provide a scientific platform for recognized experts in the field of epitaxial graphene on SiC to present their recent studies towards a deeper comprehension of growth mechanisms, property engineering and device processing. This Special Issue gives readers the possibility to gain new insights into the nature of buffer layer formation, control of electronic properties of graphene and usage of epitaxial graphene as a substrate for deposition of different substances, including metals and insulators. We believe that the papers published within the current Special Issue develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic practical applications.
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Research context
OpenAlex topics: Graphene research and applications · Silicon Carbide Semiconductor Technologies · Supercapacitor Materials and Fabrication
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Semiconductor Materials, Department of Physics, Chemistry and Biology-IFM, Linköping University, SE-58183 Linköping, Sweden
References (7)
Show source-provided references
1. Stanishev, V., Armakavicius, N., Bouhafs, C., Coletti, C., Kühne, P., Ivanov, I.G., Zakharov, A.A., Yakimova, R., and Darakchieva, V. (2021). Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation. Appl. Sci., 11.10.20944/preprints202101.0021.v1 ↗
2. Kunc, J., and Rejhon, M. (2020). Raman 2D Peak Line Shape in Epigraphene on SiC. Appl. Sci., 10.10.3390/app10072354 ↗
3. Kaushik, P.D., Yazdi, G.R., Lakshmi, G.B.V.S., Greczynski, G., Yakimova, R., and Syväjärvi, M. (2020). Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation. Appl. Sci., 10.10.3390/app10114013 ↗
4. Shtepliuk, I., Vagin, M., and Yakimova, R. (2020). Electrochemical Deposition of Copper on Epitaxial Graphene. Appl. Sci., 10.10.3390/app10041405 ↗
5. Giannazzo, F., Schilirò, E., Lo Nigro, R., Roccaforte, F., and Yakimova, R. (2020). Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review. Appl. Sci., 10.10.3390/app10072440 ↗
6. Pradeepkumar, A., Gaskill, D.K., and Iacopi, F. (2020). Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review. Appl. Sci., 10.10.3390/app10124350 ↗
7. Wu, D., Pan, Y., and Min, T. (2020). Twistronics in Graphene, from Transfer Assembly to Epitaxy. Appl. Sci., 10.10.3390/app10144690 ↗