journal article·2018-10-03Open access

Influence of Illumination Polarization and Target Structure on Measurement Sensitivity of Through-Focus Scanning Optical Microscopy

Yufu Qu, Renju Peng, Jialin Hao, Hui Pan, Jiebin Niu, Jie Jiang

Applied Sciences· Volume 8· Issue 10

Abstract

Unlike the optical information taken from a single in-focus image of general optical microscopy, through-focus scanning optical microscopy (TSOM) involves scanning a target through the focus and capturing of a series of images. These images can be used to conduct three-dimensional inspection and metrology with nanometer-scale lateral and vertical sensitivity. The sensitivity of TSOM strongly depends on many mechanical and optical factors. In this study, how illumination polarization and target structure affect the sensitivity of TSOM is analyzed. Firstly, the complete imaging procedure of the polarized light is investigated. Secondly, through-focus scanning results of different targets with two illumination polarizations are simulated using the finite-difference time-domain method. Thirdly, a few experiments are performed to verify the influence of illumination polarization and target structures on the sensitivity of TSOM. Both the results of the simulation and experiments illustrate an apparent influence of polarization on the sensitivity of inspecting the targets with center asymmetric structures. For enhanced sensitivity, illumination polarization should be perpendicular to the target texture. This conclusion is meaningful to adjust illumination polarization purposefully for different structure characteristics and improve the sensitivity of metrology.
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Research context

OpenAlex topics: Image Processing Techniques and Applications · Near-Field Optical Microscopy · Advanced Fluorescence Microscopy Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Instrumentation Science and Opto-Electronics Engineering, Beihang University, Beijing 100191, China

Institute of Microelectronics of CAS, Chinese Academy of Sciences, Beijing 100029, China

Funding

Natural National Science Foundation of China (NSFC)

References (15)

Show source-provided references
1. Ravikiran, A., Ronald, G.D., John, A.K., James, E.P., András, E.V., Benjamin, B., Erik, N., and Andrew, R. (2011). TSOM method for semiconductor metrology. Metrol. Insp. Process Control Microlithogr.
2. Noise analysis for through-focus scanning optical microscopy10.1364/OL.41.000745 ↗
3. Jun, H.L., Jun, H.P., Dohwan, J., Eun, J.S., and Chris, P. (2016). Tip/tilt-compensated through-focus scanning optical microscopy. Opt. Metrol. Insp. Ind. Appl. IV.
4. An-Shun, L., Yi-Sha, K., and Nigel, S. (2007). Through-focus technique for overlay metrology. Metrol. Insp. Process Control Microlithogr. XXI.
5. Timothy, F.C. (2010). Defect metrology challenges at the 11-nm node and beyond. Metrol. Insp. Process Control Microlithogr. XXIV.
6. Simulating semiconductor structures for next-generation optical inspection technologies10.1117/1.OE.55.2.025102 ↗
7. Ryoichi, H., Nobutaka, K., Hideaki, H., Kenichi, T., Masatoshi, H., and Hiroyuki, S. (2010). Study of EUV mask inspection technique using DUV light source for hp22nm and beyond. Photomask Technol.
8. Bryan, M.B., Richard, Q., Yeung-Joon, S., Hui, Z., and Richard, M.S. (2011). Optical illumination optimization for patterned defect inspection. Metrol. Insp. Process Control Microlithogr. XXV.
9. Stover, J.C. (2012). Optical Scattering Measurement and Analysis, SPIE Press. [3rd ed.].10.1117/3.975276 ↗
10. Parameter optimization for through-focus scanning optical microscopy10.1364/OE.24.014915 ↗
11. Feasibility study on 3-D shape analysis of high-aspect-ratio features using through-focus scanning optical microscopy10.1364/OE.24.016574 ↗
12. Uniform illumination and rigorous electromagnetic simulations applied to CMOS image sensors10.1364/OE.15.005494 ↗
13. Yeung, J.S., Brian, M.B., Lowell, H., Richard, M.S., Ravikiran, A., and Michael, T.S. (2006). Köhler illumination in high-resolution optical metrology. Metrol. Insp. Process Control Microlithogr. XX.
14. Marx, B., and Emil, W. (2009). Principles of Optics, Publishing House of Electronics Industry. [7th ed.].
15. Motion-free all optical inspection system for nanoscale topology control10.1364/OE.22.014958 ↗