Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles
Source abstract
Abstract
We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO2 NPs and preferential light via front surface.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic Information Materials Engineering, Chonbuk National University, Jeonju 54896, Korea
Department of Optical Engineering, Kongju National University, Cheonan 31080, Korea
Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISiS, 119049 Moscow, Russia
Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
Funding
National Research Foundation of Korea · Ministry of Education and Science of the Russian Federation
References (27)
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