Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits
Source abstract
Abstract
Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change and the Seebeck effect. In this paper, a comprehensive model of TLS technology is proposed. Firstly, the model presents an analytical expression of the temperature variation in Integrated Circuits (IC) after laser irradiation, which quantificationally shows the positive correlation with laser power and the negative correlation with scanning velocity. Secondly, the model describes the opposite influence of laser-induced resistance change and the Seebeck effect in the device. Finally, the relationship between the current variation measured in the experiment and other parameters, especially the voltage bias, is well explained by the model. The comprehensive model provides theoretical guidance for the efficient and accurate defect localization of TLS technology.
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Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Near-Field Optical Microscopy · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
School of Astronomy and Space Science, University of Chinese Academy of Sciences, Beijing 100049, China
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
References (18)
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