Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
Source abstract
Abstract
This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, an adequate manipulation of the gate voltage is necessary as the gate current should be reduced during the rise of the drain current to avoid overshoots and oscillations. The gate voltage is switched at the right moments on the basis of the feedback signal provided from a measurement of the voltage across the parasitic source inductance of the module. This approach simplifies the circuit and provides no additional power losses in the measuring circuit. The paper contains the theoretical background and detailed description of the active gate driver design. The model of the parasitic-based active gate driver was verified using the double-pulse procedure both in Saber simulations and laboratory experiments. The active gate driver decreases the turn-on energy of a 1.7 kV/325 A SiC MOSFET by 7% comparing to a conventional gate driver (VDS = 900 V, ID = 270 A, RG = 20 Ω). Furthermore, the proposed active gate driver lowered the turn-on cycle time from 478 to 390 ns without any serious oscillations in the main circuit.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Electromagnetic Compatibility and Noise Suppression · Electrostatic Discharge in Electronics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Control and Industrial Electronics, Warsaw University of Technology, 00-662 Warsaw, Poland
Funding
National Science Center, Poland
References (20)
Show source-provided references
1. Mishra, P., and Maheshwari, R. (2017, January 15–17). Evaluation of All SiC MOSFET Based Voltage Source Inverter with Open Loop Induction Motor. Proceedings of the 2017 14th IEEE India Council International Conference (INDICON), Roorkee, India.10.1109/INDICON.2017.8488063 ↗
2. Sayed, H., Surf, A., and Zhang, J. (2017, January 22–25). Investigation of the effects of load parasitic inductance on SC MOSFETs switching performance. Proceedings of the 2017 IEEE International Conference on Industrial Technology (ICIT), Toronto, ON, Canada.10.1109/ICIT.2017.7913070 ↗
3. Nayak, P., and Hague, K. (2016, January 14–17). Modeling of switching behavior of 1200 V sick MOSFET in presence of layout parasitic inductance. Proceedings of the 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India.10.1109/PEDES.2016.7914372 ↗
4. Sugihara, Y., Nanamori, K., Ishiwaki, S., Hayashi, Y., Aikawa, K., Umetani, K., Hiraki, E., and Yamamoto, M. (2017, January 1–5). Analytical investigation on design to avoid oscillatory false triggering of fast switching SiC-MOSFETs. Proceedings of the 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA.10.1109/ECCE.2017.8096861 ↗
5. Impact of Power Module Parasitic Capacitances on Medium-Voltage SiC MOSFETs Switching Transients
6. Rasoanarivo, I., and Dell’Isola, D. (2017, January 11–14). Improvements of switching energy of SiC transistor with respect of chip integrity and EMC standards. Proceedings of the 2017 19th European Conference on Power Electronics and Applications (EPE’17 ECCE Europe), Warsaw, Poland.10.23919/EPE17ECCEEurope.2017.8099098 ↗
7. Common Mode Noise Analysis for Cascaded Boost Converter with Silicon Carbide Devices10.1109/TPEL.2016.2569424 ↗
8. Open-Loop Gate Control for Optimizing the Turn-ON Transition of SiC MOSFETs10.1109/JESTPE.2018.2848900 ↗
9. Li, H., Jiang, Y., Feng, C., and Yang, Z. (October, January 29). A Voltage-injected Active Gate Driver for Improving the Dynamic Performance of SiC MOSFET. Proceedings of the 2019 IEEE Energy Conversion Congress and Exposition (ECCE), Baltimore, MD, USA.10.1109/ECCE.2019.8912602 ↗
10. Paredes, A., Fernandez, E., Sala, V., Ghorbani, H., and Romeral, L. (2018, January 19–22). Switching trajectory improvement of SiC MOSFET devices using a feedback gate driver. Proceedings of the 2018 IEEE International Conference on Industrial Technology (ICIT), Lyon, France.10.1109/ICIT.2018.8352288 ↗
11. Nayak, P., and Hatua, K. (2016, January 18–22). Active gate driving technique for a 1200 V SiC MOSFET to minimize detrimental effects of parasitic inductance in the converter layout. Proceedings of the 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA.10.1109/ECCE.2016.7854819 ↗
12. Wang, J., Shen, Z., DiMarino, C., Burgos, R., and Boroyevich, D. (2016, January 20–24). Gate driver design for 1.7 kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection. Proceedings of the 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA.10.1109/APEC.2016.7467921 ↗
13. Active Gate-Driver with dv/dt Controller for Dynamic Voltage Balancing in Series-Connected SiC MOSFETs10.1109/TIE.2018.2842753 ↗
14. Krishna, M.V., and Hatua, K. (2018, January 4–8). Closed loop analog active gate driver for fast switching and active damping of SiC MOSFET. Proceedings of the 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), San Antonio, TX, USA.10.1109/APEC.2018.8341530 ↗
15. A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules10.1109/TPEL.2018.2878779 ↗
16. Sobieski, R., Trochimiuk, P., Skoneczny, H., and Rąbkowski, J. (2020, January 21–26). Impact of a gate drive on performance of three-phase inverters based on 3.3 kV SiC MOSFETs. Proceedings of the 2020 Progress in Applied Electrical Engineering (PAEE), Koscielisko, Poland.10.1109/PAEE50669.2020.9158727 ↗
17. Li, X., Zhang, L., Guo, S., Lei, Y., Huang, A.Q., and Zhang, B. (2015, January 2–4). Understanding switching losses in SiC MOSFET: Toward lossless switching. Proceedings of the 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Blacksburg, VA, USA.10.1109/WiPDA.2015.7369295 ↗
18. Zeng, Y., Yi, Y., and Liu, P. (2020). An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs. Appl. Sci., 10.10.3390/app10207192 ↗
19. (2021, March 02). Wolfspeed CAS300M17BM2 Datasheet. Available online: https://www.wolfspeed.com/downloads/dl/file/id/185/product/102/cas300m17bm2.pdf.
20. Rashid, M.H. (2001). Power Electronics Handbook, Academic Press. [1st ed.].