Effects of a Reduced Effective Active Region Volume on Wavelength-Dependent Efficiency Droop of InGaN-Based Light-Emitting Diodes
Source abstract
Abstract
In this study, wavelength-dependent efficiency droop phenomena in InGaN-based light-emitting diodes (LEDs) by a reduced effective active region volume were investigated. Different effective active region volumes can be extracted from theoretical fitting to the efficiency-versus-current curves of standard high efficiency InGaN near-ultraviolet, blue, and green LEDs. It has been found that the effective volume of the active region reduces more significantly with increasing emission wavelength, resulting in a lower onset-droop current density, as well as a more severe droop. Increasing the quantum well (QW) thickness to reduce carrier density is proposed as an effective way to alleviate the efficiency droop.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93117, USA
References (33)
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