Investigation of the Two-Way Injection Slurry-Supply Method for the Cu CMP Process
Source abstract
Abstract
The effect of the two-way injection method during a copper chemical mechanical planarization (CMP) process was investigated. The two-way slurry-injection method has the advantage of not only preventing the degradation of the slurry, but also shortening the process time because the mixing process of the slurry and H2O2 is not required. Compared to the conventional method, the two-way injection method has an equivalent level of less than 9% in material removal rate. In particular, when injecting near the center of the pad, the influence according to the positions and flow rates of the two nozzles is also insignificant, so it deserves to be studied as a slurry-supply method.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Seoul 16419, Republic of Korea
School of Mechanical Engineering, Sungkyunkwan University, Seoul 16419, Republic of Korea
Funding
Technology Innovation Program (or Industrial Strategic Technology Development Program) · the Ministry of Trade, Industry & Energy (MOTIE, Republic of Korea)
References (19)
Show source-provided references
1. Thermal decomposition of hydrogen peroxide in the presence of sulfuric acid10.1007/s10973-007-8829-6 ↗
2. Total-reflection X-ray fluorescence analysis for semiconductor process characterization10.1016/S0584-8547(03)00212-X ↗
3. Growth kinetics of Cu surface layers in H2O2–BTA aqueous solutions10.35848/1347-4065/ab83dd ↗
4. Synergistic effect of glycine and BTA on step height reduction efficiency after copper CMP in weakly alkaline slurry10.1149/2.0291612jss ↗
5. Alloying Strategy for High-Performance Zinc Metal Anodes10.1021/acsenergylett.2c01960 ↗
6. Stability of dilute alkaline solutions of hydrogen peroxide10.1021/ie50552a051 ↗
7. Decomposition of hydrogen peroxide at water-ceramic oxide interfaces10.1021/jp046405d ↗
8. Effects of aging time in hydrogen peroxide-glycine-based Cu CMP slurry10.1016/j.mssp.2021.106343 ↗
9. Influence of slurry components on copper CMP performance in alkaline slurry10.1016/j.mee.2017.10.002 ↗
10. Electrochemistry of copper in aqueous glycine solutions10.1149/1.1344532 ↗
11. The role of pH on the second harmonic response of glycine sodium nitrate (GSN)
12. Effect of slurry application/injection schemes on slurry availability during chemical mechanical planarization (CMP)10.1149/2.009205esl ↗
13. Jha, A., Stoll, D., Tseng, W.T., Wu, C., Yang, J.C., and Philipossian, A. (2017, January 11–13). Application of Slurry Injection System (SIS) to Advanced Deep-Trench (DT) CMP. Proceedings of the ICPT 2017, International Conference on Planarization/CMP Technology, Leuven, Belgium.
14. Bahr, M., Sampurno, Y., Han, R., and Philipossian, A. (2017). Slurry injection schemes on the extent of slurry mixing and availability during Chemical Mechanical Planarization. Micromachines, 8.10.3390/mi8060170 ↗
15. Effect of pad groove design on slurry injection scheme during interlayer dielectric chemical mechanical planarization10.1149/2.0281507jss ↗
16. Effect of slurry injection position on material removal in chemical mechanical planarization10.1007/s00170-012-4702-2 ↗
17. Effect of slurry injection position on slurry mixing, friction, removal rate, and temperature in copper cmp10.1149/1.2048207 ↗
18. Slurry utilization efficiency studies in chemical mechanical planarization10.1143/JJAP.42.7259 ↗
19. Electrochemical behaviour of copper in alkaline glycine solutions10.1016/j.hydromet.2018.10.001 ↗