High Brightness Diode Laser Based on V-Shaped External Cavity and Beam-Waist Splitting Polarization Combining
Source abstract
Abstract
A beam combining method to improve the brightness of diode lasers is proposed based on a V-shaped external cavity spectral beam and beam-waist splitting polarization combination. This design has the outstanding advantages of improving the beam quality, brightness, and versatility of the diode laser. Specifically, an output power over 16W with M2 factors of 1.79 × 3.92 (Beam Parameter Product BPP = 0.55 × 1.22 mm mrad) at 40 A in the fast and slow axis is demonstrated for a commercial standard cm-bar. Furthermore, the slow axis M2 of the combined laser is improved by 56% compared with that of a single emitter. Additionally, the brightness of 262 MW·cm−2·sr−1, 136% higher than that of spectral beam combining without using beam-waist splitting polarization, was realized.
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Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Photonic and Optical Devices · Spectroscopy and Laser Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, China
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Funding
National Natural Science Foundation of China
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