Scanning probe lithography on calixarene towards single-digit nanometer fabrication
Source abstract
Abstract
Abstract Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe. This is achieved with self-sensing and self-actuating cantilevers, also known as ‘active’ cantilevers. Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy (<100 eV) electron exposure to thin films of molecular resist. By tuning the electron energies to the lithographically relevant chemical resist transformations, the interaction volumes can be highly localized. This method allows for greater control over spatially confined lithography and enhances sensitivity. We found that at low electron energies, the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event. The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV. By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material (positive tone) is presented.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Force Microscopy Techniques and Applications · Surface and Thin Film Phenomena · Advancements in Photolithography Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (94)
Show source-provided references
1. Prati · 2013
2. Controlled structuring of mica surfaces with the tip of an atomic force microscope by mechanically induced local etching10.1002/sia.1690 ↗
3. Nanografting for surface physical chemistry10.1146/annurev.physchem.58.032806.104542 ↗
4. Thermomechanical writing with an atomic force microscope tip10.1063/1.108460 ↗
5. Thermochemical nanopatterning of organic semiconductors10.1038/nnano.2009.254 ↗
6. Scanning probe direct-write of germanium nanostructures10.1002/adma.201001987 ↗
7. Easy writing of nanopatterns on a polymer film using electrostatic nanolithography10.1002/smll.200500370 ↗
8. Electron-beam lithography with the scanning tunneling microscope10.1116/1.585978 ↗
9. Graphite patterning in a controlled gas environment10.1088/0957-4484/22/33/335304 ↗
10. Nanoprobe maskless lithography10.1117/12.852265 ↗
11. Influence of sub-100 nm scattering on high-energy electron beam lithography10.1116/1.1415506 ↗
12. Nanofabrication10.1116/1.1600446 ↗
13. Limiting factors in sub-10 nm scanning-electron-beam lithography10.1116/1.3253603 ↗
14. Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art10.1088/0957-4484/20/29/292001 ↗
15. Investigation of proximity effects in electron microscopy and lithography10.1063/1.3681593 ↗
16. Resolution limits of electron-beam lithography toward the atomic scale10.1021/nl304715p ↗
17. Determining the resolution limits of electron-beam lithography: direct measurement of the point-spread function10.1021/nl5013773 ↗
18. Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist10.1016/j.mee.2011.05.024 ↗
19. Greeneich · 1980 · 59
20. The spatial resolution limit of electron lithography10.1016/0167-9317(83)90024-2 ↗
21. Resist processes for low-energy electron-beam lithography10.1116/1.589638 ↗
22. Energy deposition and transfer in electron-beam lithography10.1116/1.1421548 ↗
23. A database on electron-solid interactions10.1002/sca.4950170501 ↗
24. Inelastic scattering of electron and light ion beams in organic polymers10.1063/1.3581120 ↗
25. Low-energy electron-beam lithography using calixarene10.1116/1.590795 ↗
26. Photo- and electroactive amorphous molecular materials - molecular design, syntheses, reactions, properties, and applications10.1039/B413819H ↗
27. Molecular glass resists for high-resolution patterning10.1021/cm052452m ↗
28. Nanometer-scale resolution of calixarene negative resist in electron beam lithography10.1116/1.588589 ↗
29. Sub-10-nm-scale lithography using p-chloromethyl-methoxy-calix[4]arene resist10.1143/JJAP.42.3913 ↗
30. Photon-beam lithography reaches 12.5 nm half-pitch resolution10.1116/1.2401612 ↗
31. Calixarenes- prospective materials for nanofabrication10.1016/S0167-9317(96)00168-2 ↗
32. Charlesby · 1960
33. Determination of acid diffusion rate in a chemically amplified resist with scanning tunneling microscope lithography10.1116/1.586632 ↗
34. Noncontact nanolithography using the atomic force microscope10.1063/1.122504 ↗
35. Electron beam and scanning probe lithography: a comparison10.1116/1.590425 ↗
36. Ruderisch · 2003
37. Sailer · 2007
38. Systematic studies of functionalized calixarenes as negative tone electron beam10.1016/S0167-9317(98)00083-5 ↗
39. Sub-20 nm laser ablation for lithographic dry development10.1088/0957-4484/23/18/185301 ↗
40. Selective laser ablation of radiation exposed methyl acetoxy calix(6)arene10.1116/1.4767347 ↗
41. 0.1-nanometer resolution positioning stage for sub-10 nm scanning probe lithography10.1117/12.2012324 ↗
42. Scanning probes in nanostructure fabrication10.1116/1.4897500 ↗
43. Fundamental aspects of electron beam lithography. I. Depth-dose response of polymeric electron beam resists10.1063/1.1662892 ↗
44. Fundamental aspects of electron beam lithography. II. Low-voltage exposure of negative resists10.1063/1.1662893 ↗
45. Binary-encounter electron-atom collision theory10.1103/PhysRev.141.88 ↗
46. Electron exchange in binary encounter collision theory10.1088/0370-1328/89/1/304 ↗
47. Total cross section measurements for electron scattering on CH4 from 4 to 300 eV10.1016/0009-2614(92)85668-Z ↗
48. Anion states of organometallic molecules and their ligands10.1021/ar00129a004 ↗
49. Kim
50. Electron inelastic mean free paths in solids at low energies10.1016/0368-2048(90)85024-4 ↗
51. Inelastic mean free paths of low-energy electrons in solids10.12693/APhysPolA.81.169 ↗
52. Cross sections for low-energy (1-100 eV) electron elastic and inelastic scattering in amorphous ice10.1667/0033-7587(2003)159[0003:CSFLEE]2.0.CO;2 ↗
53. Elastic and inelastic cross sections for low-energy electron collisions with pyrimidine10.1063/1.3702629 ↗
54. Arrayed miniature electron beam columns for high throughput sub-100 Nm lithography10.1116/1.585994 ↗
55. Multiple beam sub-80-nm lithography with miniature electron beam column arrays10.1116/1.2811710 ↗
56. Limits of low-energy electron optics10.1116/1.586894 ↗
57. Scanning proximity probes for nanoscience and nanofabrication10.1016/j.mee.2006.01.199 ↗
58. Review article: active scanning probes: a versatile toolkit for fast imaging and emerging nanofabrication10.1116/1.4992073 ↗
59. Advanced electric-field scanning probe lithography on molecular resist using active cantilever10.1117/1.JMM.14.3.031202 ↗
60. Electron emission in intense electric fields
61. The topografiner: an instrument for measuring surface microtopography10.1063/1.1685846 ↗
62. Kragler · 1997
63. Selective laser ablation in resists and block copolymers for high resolution lithographic patterning10.2494/photopolymer.28.663 ↗
64. Six-axis AFM in SEM with self-sensing and self-transduced cantilever for high speed analysis and nanolithography10.1116/1.4964290 ↗
65. The motion of electrons in gases
66. Kapzow · 1955
67. Quantitative electron spectroscopy of surfaces: a standard data base for electron inelastic mean free paths in solids10.1002/sia.740010103 ↗
68. Secondary electrons in EUV lithography10.2494/photopolymer.26.625 ↗
69. Measurement of the role of secondary electrons in EUV resist exposures
70. Lithographic studies of an e-beam resist in a vacuum scanning tunneling microscope10.1116/1.576508 ↗
71. Low-voltage electron beam lithography with a scanning tunneling microscope10.1063/1.102703 ↗
72. Lithography with a 50 KV e beam and a vacuum scanning tunneling microscope in a polydiacetylene negative resist10.1116/1.585153 ↗
73. The overview of scanning probe lithography by electron beam exposure of organic resists
74. Induced nanoscale deformations in polymers using atomic force microscopy10.1103/PhysRevB.70.174110 ↗
75. Migration of metals on graphite in scanning tunneling microscopy10.1143/JJAP.34.L694 ↗
76. Bilayer resist process for exposure with low-voltage electrons (STM-lithography)10.1016/0167-9317(95)00284-7 ↗
77. Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode10.1116/1.5048518 ↗
78. Surface modification mechanism of materials with scanning tunneling microscope10.1063/1.360733 ↗
79. Scanning proximal probe lithography for sub-10 nm resolution on calix[4]resorcinarene10.1116/1.3662092 ↗
80. Low-energy electron exposure of ultrathin polymer films with scanning probe lithography10.1016/j.mee.2017.02.021 ↗
81. Electrostatic nanolithography in polymers using atomic force microscopy10.1038/nmat926 ↗
82. Atomic force microscope integrated with a scanning electron microscope for correlative nanofabrication and microscopy10.1116/1.5048524 ↗
83. Atomic force microscope integrated into a scanning electron microscope for fabrication and metrology at the nanometer scale10.1117/12.2537018 ↗
84. Correlative microscopy and nanofabrication with AFM integrated with SEM10.1017/S1551929519001068 ↗
85. Tip-based electron beam induced deposition using active cantilevers10.1116/1.5123287 ↗
86. Pattern-generation and pattern-transfer for single-digit Nano devices10.1116/1.4966556 ↗
87. Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography10.1063/1.5050773 ↗
88. Nanolithography by scanning probes on calixarene molecular glass resist using mix-and-match lithography10.1117/1.JMM.12.3.031111 ↗
89. Multi-step scanning probe lithography (SPL) on calixarene with overlay alignment10.1117/12.916263 ↗
90. Tennant · 1999 · 161
91. High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology10.1116/1.5067269 ↗
92. Single Nano-digit and closed-loop scanning probe lithography for manufacturing of electronic and optical nanodevices10.1117/12.2282606 ↗
93. Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions10.1117/12.2299955 ↗
94. Field-emission scanning probe lithography tool for 150 mm Wafer10.1116/1.5048357 ↗