Boosting non-oxide interfacial Co/SiO2 hybrid bonding by selective surface activation
Source abstract
Abstract
Abstract Due to its superior nanoscale properties, cobalt (Co) is highly desirable for ultrahigh-density 3D integration into materials through metal/dielectric hybrid bonding. However, this process is very challenging through Co/SiO2 hybrid bonding, as very hydrophilic SiO2 surfaces are needed for bonding during dehydration reactions and oxidation of the Co surfaces must be avoided. Additionally, the substantial coefficient of thermal expansion mismatch between the robust capping layers (Co and SiO2 layers) necessitates hybrid bonding with minimal thermal input and compression. In this study, we introduce a ternary plasma activation strategy employing an Ar/NH3/H2O gas mixture to facilitate Co/SiO2 hybrid bonding at temperatures as low as ∼200 °C, which is markedly lower than the melting point of Co (∼1500 °C). Intriguingly, non-oxide metallization at the Co–Co interface can be realized without the hindrance of a bonding barrier, thereby reducing the electrical resistance by over 40% and compression force requirements. Moreover, the enhancement in the SiO2 surface energy through active group terminations fosters extensive interfacial hydration and strengthens the mechanical properties. This research paves the way for fine-tuning bonding surfaces using a material-selective strategy, which should advance metal/dielectric hybrid bonding for future integration applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Synthesis and properties of polymers · 3D IC and TSV technologies · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (67)
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