All-Optical Modulation and Ultrafast Switching in MWIR with Sub-Wavelength Structured Silicon
Source abstract
Abstract
We investigated and optimised the performance of the all-optical reflective modulation of the Mid-Wave Infrared (MWIR) signal by means of the optically-pumped sub-wavelength-structured optical membranes made of silicon. The membranes were optically pumped by a 60-femtosecond, 800-nm laser, while another laser operating in the MWIR ranging between 4 and 6 μ m was used to probe the optical response and modulation. We were able to achieve the conditions providing the modulation depth of 80% using the pump fluence of 3.8 mJ/cm 2 . To get a better insight into the performance and the modulation mechanism, we developed an optical model based on a combination of the Wentzel–Kramers–Brillouin approximation, Drude and Maxwell–Garnett theories. The model allowed us to estimate the values of the dielectric function, carrier concentration and scattering rate of the optically-excited membrane in the MWIR range. Using the model, we optimised the performance and found the conditions at which the reflective modulation can be operated with the ultrafast response of 0.55 ps and modulation contrast of 30%.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Advanced Fiber Laser Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, UK
Department of Chemistry, University of Sheffield, Sheffield S3 7HF, UK
References (35)
Show source-provided references
1. Ultrafast all-optical modulation on a silicon chip10.1364/OL.30.002891 ↗
2. A continuous-wave Raman silicon laser10.1038/nature03346 ↗
3. Koch, B.R., Norberg, E.J., Kim, B., Hutchinson, J., Shin, J.H., Fish, G., and Fang, A. (2013, January 17–21). Integrated silicon photonic laser sources for telecom and datacom. Proceedings of the National Fiber Optic Engineers Conference, Anaheim, CA, USA.10.1364/NFOEC.2013.PDP5C.8 ↗
4. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor10.1038/nature02310 ↗
5. New infrared detector on a silicon chip10.1109/T-ED.1984.21676 ↗
6. Demonstration of time-of-flight technique with all-optical modulation and MCT detection in SWIR/MWIR range. Emerging Imaging and Sensing Technologies for Security and Defence III
7. Reed, G.T., and Knights, A.P. (2004). Silicon Photonics: An Introduction, John Wiley & Sons.10.1002/0470014180 ↗
8. Electrooptical effects in silicon10.1109/JQE.1987.1073206 ↗
9. Thermo-optical modulation at 1.5 μm in silicon etalon10.1049/el:19920051 ↗
10. Thermo-Optic Coefficient of Porous Silicon in the Infrared Region and Oxidation Process at Low Temperatures10.1149/2.0341906jes ↗
11. Optical detection and modulation at 2 μm-2.5 μm in silicon10.1364/OE.22.010825 ↗
12. Silicon optical modulators10.1038/nphoton.2010.179 ↗
13. Ultrafast integrated semiconductor optical modulator based on the plasma-dispersion effect10.1364/OL.30.002403 ↗
14. All-optical control of light on a silicon chip10.1038/nature02921 ↗
15. Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities10.1063/1.2431767 ↗
16. Mid-infrared photonics in silicon and germanium10.1038/nphoton.2010.171 ↗
17. Extending opportunities10.1038/nphoton.2012.164 ↗
18. All-optical modulation in Mid-Wavelength Infrared using porous Si membranes10.1038/srep30211 ↗
19. Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14 μm Infrared Wavelength Range10.1109/JPHOT.2011.2171930 ↗
20. Mid-infrared all-optical modulation in low-loss germanium-on-silicon waveguides10.1364/OL.40.000268 ↗
21. Nonlinearity and time-resolved studies of ion emission in ultrafast laser ablation of graphite10.1007/s00339-008-4676-y ↗
22. A model system for two-dimensional and three-dimensional photonic crystals: Macroporous silicon10.1088/1464-4258/3/6/362 ↗
23. Wu, R., Collins, J., Canham, L., and Kaplan, A. (2018). The Influence of Quantum Confinement on Third-Order Nonlinearities in Porous Silicon Thin Films. Appl. Sci., 8.10.3390/app8101810 ↗
24. Use of plasma edge reflection measurements in the study of semiconductors10.1088/0022-3719/1/5/333 ↗
25. Determination of excitation profile and dielectric function spatial nonuniformity in porous silicon by using WKB approach10.1364/OE.22.027123 ↗
26. Carrier dynamics and surface vibration-assisted Auger recombination in porous silicon10.1103/PhysRevB.97.155203 ↗
27. Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements10.1038/s41598-018-35210-z ↗
28. Enhanced carrier-carrier interaction in optically pumped hydrogenated nanocrystalline silicon10.1063/1.4755760 ↗
29. Ultrafast all-optical modulation in Fe-doped GaN at 1.31 and 1.55 μm with high contrast and ultralow power10.1063/1.4980090 ↗
30. Hynecek, J. (1987). Method and Apparatus for Using Surface Trap Recombination in Solid State Imaging Devices. (4,679,212), U.S. Patent.
31. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells10.1063/1.4861121 ↗
32. Sub-femtojoule all-optical switching using a photonic-crystal nanocavity10.1038/nphoton.2010.89 ↗
33. Resolving the ultrafast dynamics of charge carriers in nanocomposites10.1063/1.4728120 ↗
34. Electro-optic modulator based on surface plasmon resonance10.1364/AO.34.000946 ↗
35. MWIR optical modulation using structured silicon membranes10.1117/12.2242287 ↗