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journal article·2021-01-28Open access

Laser-Induced Damage Threshold of Nonlinear GaSe and GaSe:In Crystals upon Exposure to Pulsed Radiation at a Wavelength of 2.1 μm

Chongqiang Zhu, Victor Dyomin, Nikolay Yudin, Oleg Antipov, Galina Verozubova, Ilya Eranov, Mikhail Zinoviev, Sergey Podzyvalov, Yelena Zhuravlyova, Yelena Slyunko, Chunhui Yang

Applied Sciences· Volume 11· Issue 3
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Source abstract

Abstract

The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed the influence of test radiation energy parameters (pulse repetition rate, pulse duration) on the damage threshold. Laser-induced damage threshold was determined with the parameters of the incident radiation close to the pump radiation parameters of promising dual-wavelength optical parametric oscillators (effective pump sources for THz difference frequency oscillators): wavelength was ≈2.1 μm; pulse repetition rates were 10, 12, 14, and 20 kHz; and pulse durations were 15, 18, 20, and 22 ns. The obtained results made it possible to conclude that the value of GaSe damage threshold at a wavelength of 2.091 μm of the incident radiation was influenced by the accumulation effects (the damage threshold decreased as the pulse repetition rate increased). The accumulation effects were more significant in the case of the In-doped sample, since a more significant decrease in the damage threshold was observed with increasing frequency in terms of the peak power and the fluence.
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Research context

Nanomaterials

OpenAlex topics: Terahertz technology and applications · Solid-state spectroscopy and crystallography · Thermography and Photoacoustic Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China

Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia

LOC LLC., 634050 Tomsk, Russia

V.E. Zuev Institute of Atmospheric Optics SB RAS, 634055 Tomsk, Russia

Institute of Applied Physics of the Russian Academy of Sciences, 46 Ulyanov St., 603950 Nizhny Novgorod, Russia

Higher School of General and Applied Physics, Nizhny Novgorod State University, 26 Gagarin Av., 603950 Nizhny Novgorod, Russia

Laboratory of Functional Materials, Novosibirsk State University, 630090 Novosibirsk, Russia

State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China

Funding

the Ministry of Education and Science of the Russian Federation · Russian Science Foundation

References (21)

Show source-provided references
1. Terahertz generation by means of optical lasers10.1002/lapl.200810039 ↗
2. Compact Fiber-Pumped Terahertz Source Based on Difference Frequency Mixing in ZGP10.1109/JSTQE.2007.896569 ↗
3. Dmitriev, V.G., Gurzadyan, G.G., and Nikogosyan, D.N. (1999). Handbook of Nonlinear Optical Crystals, Springer.10.1007/978-3-540-46793-9 ↗
4. Coherent terahertz waves based on difference-frequency generation in an annealed zinc–germanium phosphide crystal: Improvements on tuning ranges and peak powers10.1016/j.optcom.2004.01.016 ↗
5. Compact and widely tunable terahertz source based on a dual-wavelength intracavity optical parametric oscillation10.1007/s00340-009-3786-3 ↗
6. Widely-tunable high-repetition-rate terahertz generation in GaSe with a compact dual-wavelength KTP OPO around 2 μm10.1364/OE.24.023368 ↗
7. High-average-power, high-repetition-rate tunable terahertz difference frequency generation with GaSe crystal pumped by 2 μm dual-wavelength intracavity KTP optical parametric oscillator10.1364/PRJ.5.000082 ↗
8. Tunable THz-radiation in a ZnGeP2 single crystal pumped by dual-wavelength degenerate optical parametric oscillator10.1088/1612-202X/ab72a0 ↗
9. Radiation resistance of nonlinear crystals at a wavelength of 9.55 µm10.1070/QE2001v031n12ABEH002101 ↗
10. High efficiency middle IR parametric superradiance in ZnGeP2 and GaSe crystals pumped by an erbium laser10.1016/0030-4018(91)90065-L ↗
11. 2.8 µm laser pumped type-I and type-II travelling-wave optical parametric generator in GaSe10.1016/0030-4018(94)00568-F ↗
12. Jin, G., Ji-Jiang, X., Lai-Ming, Z., Fei, C., Ke, J., Alexeev, S.V., Andreev, Y.M., Kokh, K.A., Lanskii, G.V., and Losev, V.F. (2012, January 10–14). GaSe damage threshold under IR pulse pumping. Proceedings of the SPIE, XIX International Symposium on High-Power Laser Systems and Applications, Tomsk, Russia.
13. 36W Q-switched Ho3+:YAG laser at 2097 nm pumped by a Tm fiber laser: Evaluation of different Ho3+ doping concentrations10.1088/1612-202X/14/1/015002 ↗
14. Optical breakdown threshold of silver halide polycrystalline structures acted on by the pulsed radiation of a Ho:YAG laser10.1364/JOT.86.000379 ↗
15. (2005). Lasers and Laser-Related Equipment—Test Methods for Laser Beam Widths, Divergence Angles and Beam Propagation Ratios, American National Standards Institute (ANSI). ISO 11146-1:2005.
16. Dyomin, V., Gribenyukov, A., Podzyvalov, S., Yudin, N., Zinoviev, M., Polovtsev, I., Davydova, A., and Olshukov, A. (2020). Application of Infrared Digital Holography for Characterization of Inhomogeneities and Voluminous Defects of Single Crystals on the Example of ZnGeP2. Appl. Sci., 10.10.3390/app10020442 ↗
17. Holography of particles for diagnostics tasks [Invited]10.1364/AO.58.00G300 ↗
18. Sellmeier and thermo-optic dispersion formulas for GaSe (Revisited)10.1364/AO.52.002325 ↗
19. Lidaris LIDT Service (2020, November 16). The R-on-1 Test. Available online: http://lidaris.com/laserdamage-testing/.
20. (1980). Statistical Interpretation of Test Results—Estimation of the Mean—Confidence Interval, American National Standards Institute (ANSI). ISO 2602:1980.
21. Aplications of “Student’s” Distribution