Second-Harmonic Generation of Blue Light in GaN Waveguides
Source abstract
Abstract
Second-harmonic generation was studied in III-metal-polar GaN films grown on sapphire substrates by metalorganic chemical vapor deposition and formed into ridge waveguides. Broadband near-IR femtosecond pulses of an optical parametric amplifier system were injected by end-fire coupling and the nonlinear response was measured while tuning the central wavelength. A prominent peak was found at 450 nm for 1140 nm thick and 10 μm wide GaN waveguides. The measured second-harmonic peak was in agreement with the modal-dispersion phase matching condition calculated using the dispersion of the extraordinary refractive indices of GaN obtained by prism coupling.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Advanced Fiber Laser Technologies · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Mathematics and Physics, University of Ljubljana, 1000 Ljubljana, Slovenia
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27606, USA
Adroit Materials, Inc., Suite 800, Morrisville, NC 27560, USA
Jožef Stefan Institute, 1000 Ljubljana, Slovenia
References (36)
Show source-provided references
1. Nakamura, S., Pearton, S., and Fasol, G. (2000). The Blue Laser Diode, Springer. [2nd ed.].10.1007/978-3-662-04156-7 ↗
2. Morkoc, H. (1999). Nitride Semiconductors and Devices, Springer.10.1007/978-3-642-58562-3 ↗
3. Paschotta, R. (2008). Encyclopedia of Laser Physics and Technology, Wiley-VCH. [1st ed.].
4. Silfvast, T.W. (2004). Laser Fundamentals, Cambridge University Press. [2nd ed.].10.1017/CBO9780511616426 ↗
5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres10.1038/nature04760 ↗
6. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels10.1063/1.1728307 ↗
7. Study of nonlinear optical effects in GaN:Mg epitaxial film10.1063/1.117741 ↗
8. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN10.1063/1.1390485 ↗
9. Advances in group III-nitride-based deep UV light-emitting diode technology10.1088/0268-1242/26/1/014036 ↗
10. Ultraviolet semiconductor laser diodes on bulk AlN10.1063/1.2747546 ↗
11. AlGaN-based laser diodes for the short-wavelength ultraviolet region10.1088/1367-2630/11/12/125013 ↗
12. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures10.1063/1.4803689 ↗
13. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode10.1038/nphoton.2008.135 ↗
14. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity10.1002/pssa.200982629 ↗
15. Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3 < x < 0.5)10.1063/1.1867565 ↗
16. Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates10.1149/1.3560527 ↗
17. Second-harmonic generation in periodically poled GaN10.1063/1.1599044 ↗
18. GaN, AlN, and InN: A review
19. Pezzagna, S., Brault, J., de Micheli, M., Vennegues, P., Wieck, A.D., and Massies, J. (2007). GaN, a new material for integrated nonlinear optics. Proc. ECIO, 25–27.
20. Optical characterization of Al- and N-polar AlN waveguides for integrated optics10.7567/APEX.8.042603 ↗
21. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition10.1063/1.4800554 ↗
22. Quasi-phase matching10.1016/j.crhy.2006.10.022 ↗
23. Playing with Polarity10.1002/1521-3951(200111)228:2<505::AID-PSSB505>3.0.CO;2-U ↗
24. Pliska, T., Fluck, D., and Gunter, P. (2000). Second-Harmonic Generation in Ferroelectric Waveguides. Nonlinear Optical Effects and Materials, Springer.10.1007/978-3-540-49713-4_6 ↗
25. Phase-matched frequency doubling in an aluminum nitride waveguide with a tunable laser source10.1063/1.114121 ↗
26. UV second harmonic generation in AlN waveguides with modal phase matching10.1364/OME.6.002014 ↗
27. Kawano, K., and Kitoh, T. (2001). Introduction to Optical Waveguide Analysis: Solving Maxwell’s Equation and the Schrodinger Equation, Wiley-Interscience.10.1002/0471221600 ↗
28. Modes of dielectric waveguides of arbitrary cross sectional shape10.1364/JOSA.69.001226 ↗
29. Bass, M., Mahajan, V.N., and Van Stryland, E.W. (2010). Handbook of Optics—Design, Fabrication, and Testing; Sources and Detectors; Radiometry and Photometry, McGraw-Hill, Inc.. [3rd ed.].
30. Refractive index study of AxGa1-xN films grown on sapphire substrates10.1063/1.1598276 ↗
31. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence10.1063/1.2815748 ↗
32. Fabrication of GaN lateral polarity junction by metalorganic chemical vapor deposition10.1016/j.jcrysgro.2009.01.075 ↗
33. Polarity control and growth of lateral polarity structures in AlN10.1063/1.4804575 ↗
34. Hoffman, M.P., Gerhold, M., Kirste, R., Rice, A., Akouala, C.R., Xie, J.Q., Mita, S., Collazo, R., and Sitar, Z. (2013). Fabrication And Characterization of Lateral Polar GaN Structures for Second Harmonic Generation. Proc. SPIE, 8631.10.1117/12.2008827 ↗
35. Comparative study of etching high crystalline quality AlN and GaN10.1016/j.jcrysgro.2012.12.141 ↗
36. Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition10.1063/1.2952027 ↗