Microstructure and Creep Behavior of Silicon Nitride and SiAlONs
Source abstract
Abstract
Microstructural evolution of silicon nitride (Si 3 N 4 ) and SiAlON materials and its influence on creep resistance is reviewed. Grain size, grain morphology, and the ratio of α‐ to β‐phase grains play a part in resistance to creep. The glassy, intergranular phase typically has the strongest influence on creep. Creep data are usually obtained using uniaxial tensile or compressive tests, where creep in tension is controlled by cavitation and grain boundary sliding controls creep in compression. The impression creep methodology is also reviewed. An additional creep mechanism, dilation of the SiAlON grain structure, was found to be active in impression creep.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Semiconductor materials and devices · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. Silicon Nitride and Related Materials10.1111/j.1151-2916.2000.tb01182.x ↗
2. P.Grieveson K. H.Jack andS.Wild Progress Report No. 1 Ministry of Defence Contract N/CP.61/9411/67/4B/M.P. in The Crystal Chemistry of Ceramic Phases in the Silicon–Nitrogen–Oxygen and Related Systems July 1968 387.
3. Y.OyamaandK.Kamigaito “Solid Solubility of Some Oxides in Si3N4 ”Jpn. J. Appl. Phys.101637–1642(1971).
4. K.Komeya H.Inoue andA.Tsuge“Heat Resistive and Reinforced Composite Material ” United States Patent 3 969 125 1976.
5. 10.1143/JJAP.10.163710.1143/JJAP.10.1637 ↗
6. Wild S. · 1970 · 289
7. Solid Solubility of Alumina in Silicon Nitride
8. 10.1111/j.1151-2916.1992.tb08175.x10.1111/j.1151-2916.1992.tb08175.x ↗
9. Review
10. 10.1016/S0955-2219(00)00039-X10.1016/S0955-2219(00)00039-X ↗
11. 10.1007/BF0071978310.1007/BF00719783 ↗
12. 10.1038/274880a010.1038/274880a0 ↗
13. 10.4028/www.scientific.net/MSF.47.2110.4028/www.scientific.net/MSF.47.21 ↗
14. 10.1111/j.1151-2916.1975.tb11502.x10.1111/j.1151-2916.1975.tb11502.x ↗
15. Transient Growth Bands in Silicon Nitride Cooled in Rare‐Earth‐Based Glass10.1111/j.1151-2916.1997.tb02997.x ↗
16. 10.1111/j.1151-2916.1993.tb04019.x10.1111/j.1151-2916.1993.tb04019.x ↗
17. 10.1016/0267-3762(86)90003-210.1016/0267-3762(86)90003-2 ↗
18. 10.1016/0921-5093(89)90613-810.1016/0921-5093(89)90613-8 ↗
19. 10.1016/0955-2219(93)90074-210.1016/0955-2219(93)90074-2 ↗
20. 10.1016/S0955-2219(96)00112-410.1016/S0955-2219(96)00112-4 ↗
21. 10.1016/0955-2219(95)00164-610.1016/0955-2219(95)00164-6 ↗
22. 10.1016/S0955-2219(98)00251-910.1016/S0955-2219(98)00251-9 ↗
23. 10.1007/BF0035626110.1007/BF00356261 ↗
24. 10.1023/A:100435473264810.1023/A:1004354732648 ↗
25. 10.4028/www.scientific.net/KEM.132-136.79810.4028/www.scientific.net/KEM.132-136.798 ↗
26. Eutectic Studies in the System Si3N4–Si2N2O–Mg2SiO4
27. 10.1111/j.1151-2916.1977.tb14089.x10.1111/j.1151-2916.1977.tb14089.x ↗
28. 10.1111/j.1151-2916.1987.tb04846.x10.1111/j.1151-2916.1987.tb04846.x ↗
29. 10.2109/jcersj.105.45310.2109/jcersj.105.453 ↗
30. 10.1111/j.1151-2916.1993.tb03741.x10.1111/j.1151-2916.1993.tb03741.x ↗
31. Grain Boundary Films in Rare‐Earth‐Glass‐Based Silicon Nitride10.1111/j.1151-2916.1996.tb07946.x ↗
32. 10.4028/www.scientific.net/MSF.325-326.23110.4028/www.scientific.net/MSF.325-326.231 ↗
33. 10.1007/BF0240325010.1007/BF02403250 ↗
34. Variation of Width and Composition of Grain‐Boundary Film in a High‐Purity Silicon Nitride with Minimal Silica10.1111/j.1151-2916.2002.tb00034.x ↗
35. 10.1111/j.1151-2916.2003.tb03554.x10.1111/j.1151-2916.2003.tb03554.x ↗
36. 10.1038/nature0241010.1038/nature02410 ↗
37. 10.1063/1.224521210.1063/1.2245212 ↗
38. 10.1126/science.110417310.1126/science.1104173 ↗
39. 10.1103/PhysRevB.70.14410810.1103/PhysRevB.70.144108 ↗
40. 10.1111/j.1151-2916.2002.tb00466.x10.1111/j.1151-2916.2002.tb00466.x ↗
41. 10.1111/j.1151-2916.1992.tb04464.x10.1111/j.1151-2916.1992.tb04464.x ↗
42. 10.1023/A:102678272306510.1023/A:1026782723065 ↗
43. Suppression of Viscous Grain‐Boundary Sliding in a Dilute SiAlON Ceramic10.1111/j.1151-2916.1997.tb03126.x ↗
44. 10.1111/j.1151-2916.2004.tb07722.x10.1111/j.1151-2916.2004.tb07722.x ↗
45. 10.1111/j.1151-2916.1995.tb08219.x10.1111/j.1151-2916.1995.tb08219.x ↗
46. 10.4028/www.scientific.net/MSF.325-326.21910.4028/www.scientific.net/MSF.325-326.219 ↗
47. Microstructural Tailoring and Characterization of a Calcium α‐SiAlON Composition10.1111/j.1151-2916.2002.tb00177.x ↗
48. Grain‐Boundary Viscosity of Calcium‐Doped Silicon Nitride10.1111/j.1151-2916.1998.tb02601.x ↗
49. 10.1016/S0167-577X(99)00280-310.1016/S0167-577X(99)00280-3 ↗
50. 10.1016/S0955-2219(97)00020-410.1016/S0955-2219(97)00020-4 ↗
51. 10.1111/j.1151-2916.1993.tb04015.x10.1111/j.1151-2916.1993.tb04015.x ↗
52. 10.1016/j.jeurceramsoc.2003.10.03410.1016/j.jeurceramsoc.2003.10.034 ↗
53. Hoffmann M. J. · 2000 · 65
54. Microstructural Design and Control of Silicon Nitride Ceramics10.1557/S0883769400049204 ↗
55. 10.1111/j.1151-2916.1973.tb12401.x10.1111/j.1151-2916.1973.tb12401.x ↗
56. Gas‐Pressure Sintering of Si3N4 with Concurrent Addition of Al2O3 and 5 wt% Rare Earth Oxide
57. Microstructural Design of Silicon Nitride with Improved Fracture Toughness
58. 10.1038/417266a10.1038/417266a ↗
59. Microstructural Design of Silicon Nitride with Improved Fracture Toughness
60. 10.1016/S1359-6454(99)00122-610.1016/S1359-6454(99)00122-6 ↗
61. 10.1111/j.1551-2916.2005.00237.x10.1111/j.1551-2916.2005.00237.x ↗
62. On the Effect of Local Grain‐Boundary Chemistry on the Macroscopic Mechanical Properties of a High‐Purity Y2O3–Al2O3‐Containing Silicon Nitride Ceramic
63. Ziegler A. · 2003 · 201
64. Creep and Stress Rupture Behavior of an Advanced Silicon Nitride
65. 10.1111/j.1151-2916.1995.tb08620.x10.1111/j.1151-2916.1995.tb08620.x ↗
66. 10.1016/S0955-2219(98)00184-810.1016/S0955-2219(98)00184-8 ↗
67. Creep Variability of Syalon Ceramics
68. 10.1007/BF0054452810.1007/BF00544528 ↗
69. 10.1016/S0955-2219(97)00008-310.1016/S0955-2219(97)00008-3 ↗
70. High‐Temperature Properties of Mixed α′/β′‐SiAlON Materials10.1111/j.1151-2916.1998.tb02461.x ↗
71. 10.1016/S0955-2219(00)00269-710.1016/S0955-2219(00)00269-7 ↗
72. 10.1007/BF0040087310.1007/BF00400873 ↗
73. 10.1111/j.1151-2916.1997.tb02794.x10.1111/j.1151-2916.1997.tb02794.x ↗
74. A New Model for Tensile Creep of Silicon Nitride10.1111/j.1151-2916.1999.tb02154.x ↗
75. 10.1111/j.1151-2916.1994.tb05345.x10.1111/j.1151-2916.1994.tb05345.x ↗
76. 10.1007/BF0035782210.1007/BF00357822 ↗
77. Creep and Stress Rupture Behavior of an Advanced Silicon Nitride
78. 10.1080/1478644850862779110.1080/14786448508627791 ↗
79. Comparison of Tensile and Compressive Creep Behavior in Silicon Nitride10.1111/j.1151-2916.2000.tb01505.x ↗
80. 10.1111/j.1151-2916.1981.tb10239.x10.1111/j.1151-2916.1981.tb10239.x ↗
81. Compressive Creep of Si3N4/MgO Alloys, Part 2
82. Microstructure Characterization in Superplastically Deformed Silicon Nitride10.1111/j.1151-2916.1997.tb02917.x ↗
83. 10.1002/9780470313008.ch1010.1002/9780470313008.ch10 ↗
84. 10.1111/j.1151-2916.1997.tb02885.x10.1111/j.1151-2916.1997.tb02885.x ↗
85. High‐Resolution Electron Microscopy Investigation of Viscous Flow Creep in a High‐Purity Silicon Nitride10.1111/j.1151-2916.1999.tb01946.x ↗
86. 10.1111/j.1151-2916.1993.tb03801.x10.1111/j.1151-2916.1993.tb03801.x ↗
87. Grain Boundary Film Thicknesses in Superplastically Deformed Silicon Nitride10.1111/j.1151-2916.1997.tb02967.x ↗
88. 10.1557/JMR.2000.022210.1557/JMR.2000.0222 ↗
89. 10.1111/j.1151-2916.1993.tb04019.x10.1111/j.1151-2916.1993.tb04019.x ↗
90. 10.1557/JMR.1996.019110.1557/JMR.1996.0191 ↗
91. 10.1016/S0921-5093(01)01116-910.1016/S0921-5093(01)01116-9 ↗
92. 10.1557/JMR.1994.090310.1557/JMR.1994.0903 ↗
93. 10.1023/A:101852401650510.1023/A:1018524016505 ↗
94. Impression Creep
95. Mechanical Behavior of MoSi2 Reinforced‐Si3N4 Matrix Composites10.1111/j.1151-2916.1997.tb03234.x ↗
96. 10.1111/j.1551-2916.2006.01100.x10.1111/j.1551-2916.2006.01100.x ↗
97. Compressive Creep of Si3N4/MgO Alloys, Part 3
98. Anelastic Recovery in Crept Silicon Nitride
99. 10.2109/jcersj.104.93910.2109/jcersj.104.939 ↗
100. 10.1111/j.1551-2916.2004.00421.x10.1111/j.1551-2916.2004.00421.x ↗