Microanalyses on the RuO 2 Particle–Glass Matrix Interface in Thick‐Film Resistors with Piezoresistive Effects
Source abstract
Abstract
The piezoresistive mechanisms of composite thick films based on RuO 2 particles and both calcium‐borosilicate and bismuth‐borosilicate glass matrices were investigated by chemical and electrical microanalyses. The resistor based on bismuth‐borosilicate glass showed higher sensitivity than that based on calcium‐borosilicate glass. It was confirmed that the diffusion of ruthenium into glass affects the binding state of RuO 2 at the interface of the glass. Furthermore, an intermediate resistive layer is detected around the RuO 2 particle. These results suggest that the piezoresistive effect is related to a change in the electrical conductivity of the interfacial reaction layer caused by the diffusion of ruthenium into glass.
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Research context
OpenAlex topics: Electrical and Thermal Properties of Materials · Ferroelectric and Piezoelectric Materials · Advanced Sensor Technologies Research
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References (15)
Show source-provided references
1. 10.1063/1.33177910.1063/1.331779 ↗
2. Piezoresistive Properties of RuO2‐Based Thick‐Film Resistors
3. 10.1016/S0955-2219(01)00160-110.1016/S0955-2219(01)00160-1 ↗
4. 10.1016/S0924-4247(02)00402-810.1016/S0924-4247(02)00402-8 ↗
5. 10.1007/s10854-006-0013-410.1007/s10854-006-0013-4 ↗
6. K.Takahashi “Semiconductor Engineering” Chapter 13 Other semiconductor device.Morikita Syuppan Tokyo Japan 285–290 1975(in Japanese).
7. Microstructure and Electrical Conduction in RuO2 Thick Film Resistors10.1541/ieejfms1972.109.111 ↗
8. 10.1007/BF0265542310.1007/BF02655423 ↗
9. 10.1557/JMR.1994.186610.1557/JMR.1994.1866 ↗
10. 10.1016/0167-2738(94)00207-910.1016/0167-2738(94)00207-9 ↗
11. 10.1063/1.32359510.1063/1.323595 ↗
12. 10.1002/(SICI)1521-3951(199801)205:1<399::AID-PSSB399>3.0.CO;2-X10.1002/(SICI)1521-3951(199801)205:1<399::AID-PSSB399>3.0.CO;2-X ↗
13. 10.1103/PhysRevB.67.01420510.1103/PhysRevB.67.014205 ↗
14. Electric Structure Analysis of High‐k Dielectric Films by Using TEM–EELS
15. Y.Ooki “Dielectric Property” Chapter 3 Electronic conduction.Baihukan Tokyo Japan 35–42 2002(in Japanese).