journal article·2022-01

Thermally stable Mn 2+ ‐activated zinc silicate nanophosphor for speedy recognition of high‐contrast latent fingermarks

Mukesh K. Sahu, Swati Bishnoi, G. Swati, M. Jayasimhadri, D. Haranath

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Abstract

Abstract Crystalline divalent manganese‐activated zinc orthosilicate (Zn 2 SiO 4 :Mn 2+ ) nanophosphor has been synthesized via the solution‐based sol–gel process. Structural, morphological, and photoluminescence (PL) properties were explored. X‐ray diffraction pattern confirms the crystalline hexagonal structure of the single‐phase Zn 2 SiO 4 powder. The size and shape of Zn 2 SiO 4 powder were analyzed using micrographs, which implies that the prepared phosphor particles are in the nano range. PL spectra have been recorded as a function of Mn 2+ dopant concentration. A dominant green (∼526 nm) emission broad peak was observed owing to the characteristic ( 4 T 1 → 6 A 1 ) transition of Mn 2+ ion under UV/blue excitation. The green emission (∼526 nm) intensity depends upon the doping concentration of Mn 2+ ion, and it is found to be optimum for 2.0 mol%, after that quenching phenomenon was registered. The CIE color coordinate of Zn 2 SiO 4 :Mn 2+ lies in the bright green region under UV excitation with 94.3% color purity. Real‐time experiments have been carried out for speedy development of high‐contrast fingermarks using Zn 2 SiO 4 nanophosphor on various porous and nonporous substrates.
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Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Forensic Fingerprint Detection Methods · Luminescence and Fluorescent Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Luminescent Materials Research Lab (LMRL) Department of Applied Physics Delhi Technological University New Delhi 110042 India

Centre for Nanoscience and Molecular Medicine Amrita Vishwa Vidyapeetham Kochi Kerala 682024 India

Centre for Nanotechnology Research Vellore Institute of Technology Vellore Tamil Nadu 632014 India

Luminescent Materials and Devices Group, Department of Physics National Institute of Technology Warangal Telangana 506004 India

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