Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation
Source abstract
Abstract
Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
Special Centre for Nanoscience, Jawaharlal Nehru University, New Delhi 110067, India
Funding
ÅForsk research grant
References (53)
Show source-provided references
1. The rise of graphene10.1038/nmat1849 ↗
2. Dvorak, M., Oswald, W., and Wu, Z. (2013). Bandgap Opening by Patterning Graphene. Sci. Rep., 3.10.1038/srep02289 ↗
3. Nitrogen doped epitaxial graphene on 4H-SiC(0001)—Experimental and theoretical study10.1016/j.carbon.2015.06.073 ↗
4. Electron-beam-induced direct etching of graphene10.1016/j.carbon.2013.07.038 ↗
5. Covalent Functionalization by Cycloaddition Reactions of Pristine Defect-Free Graphene10.1021/acsnano.6b06913 ↗
6. Investigation on gallium ions impacting monolayer graphene10.1063/1.4923395 ↗
7. Surface modification of multilayer graphene using Ga ion irradiation10.1063/1.4919071 ↗
8. Investigating change of properties in gallium ion irradiation patterned single-layer graphene10.1016/j.physleta.2016.08.025 ↗
9. Ion beam irradiation of few-layer graphene and its application to liquid crystal cells10.1016/j.carbon.2013.10.005 ↗
10. A General Route Towards Defect and Pore Engineering in Graphene10.1002/smll.201303671 ↗
11. Direct nano-patterning of graphene with helium ion beams10.1063/1.4906415 ↗
12. FIB carving of nanopores into suspended graphene films10.1016/j.mee.2012.02.029 ↗
13. Investigation of the effect of low energy ion beam irradiation on mono-layer graphene10.1063/1.4816715 ↗
14. Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene10.1063/1.4895801 ↗
15. Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic, and Transport Properties10.1021/acs.nanolett.5b01280 ↗
16. Raman and morphology visualization in epitaxial graphene on 4H-SiC by Nitrogen or Argon ion irradiation10.1016/j.nimb.2015.08.051 ↗
17. Surface functionalization of epitaxial graphene using ion implantation for sensing and optical applications10.1016/j.carbon.2019.09.071 ↗
18. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application10.1016/j.apsusc.2017.01.111 ↗
19. Ion irradiation and defect formation in single layer graphene10.1016/j.carbon.2009.07.033 ↗
20. Manipulation of the graphene surface potential by ion irradiation10.1063/1.4801973 ↗
21. Study of damage in ion-irradiated α-SiC by optical spectroscopy10.1088/0953-8984/18/37/008 ↗
22. Structural and optical modification in 4H-SiC following 30 keV silver ion irradiation. (International Conference on Inventive Research in Material Science and Technology, Hotel Arcadia, Coimbatore, Tamil Nadu, India, 23–24 March 2018)10.1063/1.5038714 ↗
23. Granzier-Nakajima, T., Fujisawa, K., Anil, V., Terrones, M., and Yeh, Y.-T. (2019). Controlling Nitrogen Doping in Graphene with Atomic Precision: Synthesis and Characterization. Nanomater, 9.10.3390/nano9030425 ↗
24. Lee, W.J., Lim, J., and Kim, S.O. (2017). Carbon Nanomaterials: Nitrogen Dopants in Carbon Nanomaterials: Defects or a New Opportunity? (Small Methods 1-2/2017). Small Methods, 1.10.1002/smtd.201770011 ↗
25. Growth of large area monolayer graphene on 3C-SiC and a comparison with other SiC polytypes10.1016/j.carbon.2013.02.022 ↗
26. SRIM—The stopping and range of ions in matter10.1016/j.nimb.2010.02.091 ↗
27. Walton, J., Wincott, P., Fairley, N., and Carrick, A. (2010). Peak Fitting with CasaXPS: A Casa Pocket Book, Accolyte Science.
28. Effects of ion bombardment on a two-dimensional target: Atomistic simulations of graphene irradiation10.1103/PhysRevB.81.153401 ↗
29. Atomic scale simulation of defect production in irradiated 3C-SiC10.1063/1.1389523 ↗
30. A Simple method to calculate the displacement damage cross section of silicon carbide10.5516/NET.01.2013.051 ↗
31. Growth and structure of graphitic tubules and polyhedral particles in arc-discharge10.1016/0009-2614(93)90009-P ↗
32. Modification on graphite due to helium ion irradiation10.1016/j.physleta.2016.05.044 ↗
33. Raman spectroscopy in graphene10.1016/j.physrep.2009.02.003 ↗
34. Raman characterization of defects and dopants in graphene10.1088/0953-8984/27/8/083002 ↗
35. Probing the Nature of Defects in Graphene by Raman Spectroscopy10.1021/nl300901a ↗
36. Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies10.1021/nl201432g ↗
37. The Effect of Low Energy Nitrogen Ion Implantation on Graphene Nanosheets10.1007/s13391-018-0046-x ↗
38. Effect of defects on the intrinsic strength and stiffness of graphene10.1038/ncomms4186 ↗
39. Quantifying ion-induced defects and Raman relaxation length in graphene10.1016/j.carbon.2009.12.057 ↗
40. Damage and strain in single-layer graphene induced by very-low-energy electron-beam irradiation10.1063/1.4790388 ↗
41. Annealing effect on surfaces of 4H(6H)SiC(0001)Si face10.1016/S0169-4332(96)00903-8 ↗
42. Modifications in structural, optical and electrical properties of epitaxial graphene on SiC due to 100 MeV silver ion irradiation10.1016/j.mssp.2017.09.026 ↗
43. Micro-Raman Characterization of 4H-SiC Stacking Faults10.4028/www.scientific.net/MSF.778-780.378 ↗
44. Raman Spectroscopy Study of Heavy-Ion-Irradiated Alpha-SiC10.1088/0953-8984/18/22/022 ↗
45. One and two-phonon Raman scattering from nanostructured silicon10.1016/j.ijleo.2015.05.088 ↗
46. Optical and structural properties of 6H–SiC implanted with silicon as a function of implantation dose and temperature
47. Damage production in semiconductor materials by a focused Ga+ ion beam10.1063/1.1319168 ↗
48. Pt based nanocomposites (mono/bi/tri-metallic) decorated using different carbon supports for methanol electro-oxidation in acidic and basic media10.1039/c1nr10273g ↗
49. Nitrogen ion implanted graphene as thrombo-protective safer and cytoprotective alternative for biomedical applications10.1016/j.carbon.2013.05.011 ↗
50. Interaction Induced High Catalytic Activities of CoO Nanoparticles Grown on Nitrogen-Doped Hollow Graphene Microspheres for Oxygen Reduction and Evolution Reactions10.1038/srep27081 ↗
51. Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): A review of growth, characterization, transfer doping and hydrogen intercalation10.1088/0022-3727/43/37/374009 ↗
52. Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy10.1039/c2cp41709j ↗
53. Oxygen functional groups and electrochemical capacitive behavior of incompletely reduced graphene oxides as a thin-film electrode of supercapacitor10.1016/j.electacta.2013.11.040 ↗