journal article·2019-07-19Open access

Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates

Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, Liwen Sang

Applied Sciences· Volume 9· Issue 14

Abstract

The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 1012 Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 104 at zero voltage. It is found that a relatively lower growth rate for the GaN epilayer is preferred to improve the performance of the Schottky-type photodetectors due to the better microstructure and surface properties.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Research Center for Functional Materials, National Institute for Materials Sciences, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

Amano-Koide Collaborative Research Lab, National Institute for Materials Science, (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funding

National Natural Science Foundation of China · Science and Technology Commission of Shanghai · Japan Society for the Promotion of Science

References (21)

Show source-provided references
1. Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures10.1038/srep02368 ↗
2. Schottky barrier detectors on GaN for visible-blind ultraviolet detection10.1063/1.118837 ↗
3. III nitrides and UV detection10.1088/0953-8984/13/32/316 ↗
4. High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator10.1063/1.3562326 ↗
5. Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale P-N junctions10.1002/adma.201003156 ↗
6. Improved performance of planar GaN-based P-I-N photodetectors with Mg-implanted isolation ring10.1063/1.2372767 ↗
7. High-temperature ultraviolet detection based on InGaN schottky photodiodes10.1063/1.3615291 ↗
8. Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes10.1063/1.4971982 ↗
9. Influence of defects in n-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors10.1063/1.2450658 ↗
10. Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments10.1016/j.jallcom.2018.07.150 ↗
11. Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance10.7567/APEX.10.051001 ↗
12. Extraction of Schottky diode parameters from forward current-voltage characteristics10.1063/1.97359 ↗
13. Effect of rapid thermal annealing on barrier height and 1/F noise of Ni/GaN Schottky barrier diodes10.1063/1.4929829 ↗
14. Mechanism of anomalous current transport in n-type GaN Schottky contacts10.1116/1.1491539 ↗
15. Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts10.1088/0256-307X/24/10/062 ↗
16. High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes10.1088/0268-1242/20/6/002 ↗
17. GaN metal-semiconductor-metal ultraviolet photodetector with IrO2 Schottky contact10.1063/1.1524035 ↗
18. GaN photodetectors with transparent indium tin oxide electrodes10.1143/JJAP.43.4146 ↗
19. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm10.1126/science.1176706 ↗
20. High-performance visible to near-infrared photodetectors by using (Cd, Zn) Te single crystal10.1364/OE.27.008935 ↗
21. Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped B-Ga2O3 thin films10.1063/1.4952618 ↗