Stitching-Based Resolution Enhancement in Wavefront Phase Measurement of Silicon Wafer Surfaces

The increasing demand for higher resolution and faster machinery in silicon wafer inspection is driven by the rise in electronic device production and the decreasing size of microchips. This paper presents the design and implementation of a device capable of accurately measuring the surface of silicon wafers using the stitching technique. We propose an optical system design for measuring the surface profile, specifically targeting the roughness and nanotopography of a silicon wafer. The device achieves a lateral resolution of 7.56 μm and an axial resolution of 1 nm. It can measure a full 300-mm wafer in approximately 60 min, acquiring around 400 million data points. The technique utilized is a wavefront phase sensor, which reconstructs the surface shape using two images displaced a certain distance from the conjugate plane in the image space of a 4f system. The study details the calibration process and provides a method for converting local measurement coordinates to global coordinates. Quantitative phase imaging was obtained by using the wave front intensity image algorithm. The conclusive results validate the method different metrics over a wafer with bonded dies. In addition, the device demonstrates the ability to distinguish different dies that are thinned along with die-to-wafer bonding onto a carrier wafer to obtain the difference in coplanarity between the die and its surroundings as well as to detect defects during the die-to-wafer bonding. Lastly, the residual stress in the thin film deposited over the die is obtained using the Stoney model.