Exploring Chemical Catalytic Mechanisms for Enhancing Bonding Energy in Direct Silicon Dioxide Wafer Bonding
Source abstract
Abstract
The influence of pH on silicon dioxide direct bonding is studied, unveiling its role in bonding energy enhancement. We show that the deposition of basic salt or molecules consistently increases the silicon dioxide adherence energy. The underlying mechanisms, including silica hydrolysis and catalysis of siloxane bond formation, are explored. The results offer valuable insights into optimized direct bonding processes for microelectronics and related applications.
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Research context
OpenAlex topics: 3D IC and TSV technologies · Additive Manufacturing and 3D Printing Technologies · Electronic Packaging and Soldering Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Université Grenoble Alpes, CEA, LETI, 17 rue des Martyrs, 38054 Grenoble, CEDEX 9, France
SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France
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