Formation of the complete range of Ti5Si3−xGex solid solutions via mechanically induced self-sustained reactions
Source abstract
Abstract
The complete range of Ti5Si3-Ti5Ge 3 solid solutions was synthesised from elemental mixtures of Ti, Si, and Ge under an inert atmosphere via mechanically induced self-sustaining reactions (MSR). The stoichiometry of Ti5Si3-xGe x solid solutions was controlled by adjusting the Si/Ge ratio of the initial mixture. The chemical composition and lattice parameters of the materials confirmed that Ti5Si3-Ti5Ge 3 solid solutions with good chemical homogeneity could be produced via MSR.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · MXene and MAX Phase Materials · Chalcogenide Semiconductor Thin Films
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