Refractive Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz Region
Source abstract
Abstract
Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.
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Research context
OpenAlex topics: Terahertz technology and applications · Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Physical Laboratory, Teddington TW11 0LW, UK
Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK
The Paul Scherrer Institute, 5232 Villigen, Switzerland
References (24)
Show source-provided references
1. The 2017 terahertz science and technology roadmap10.1088/1361-6463/50/4/043001 ↗
2. Perspective: Terahertz science and technology10.1063/1.5007683 ↗
3. Terahertz spectroscopy and imaging—Modern techniques and applications10.1002/lpor.201000011 ↗
4. Tutorial: An introduction to terahertz time domain spectroscopy (THz-TDS)10.1063/1.5047659 ↗
5. A review of non-linear terahertz spectroscopy with ultrashort tabletop-laser pulses10.1080/09500340.2014.918200 ↗
6. Twenty years of terahertz imaging [Invited]10.1364/OE.26.009417 ↗
7. Toward real-time terahertz imaging10.1364/AOP.10.000843 ↗
8. Nonlinear light–matter interaction at terahertz frequencies10.1364/AOP.8.000401 ↗
9. Coherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation10.1038/ncomms16038 ↗
10. Naftaly, M., Vieweg, N., and Deninger, A. (2019). Industrial Applications of Terahertz Sensing: State of Play. Sensors, 19.10.3390/s19194203 ↗
11. 637 μW emitted terahertz power from photoconductive antennas based on rhodium doped InGaAs10.1063/5.0020766 ↗
12. Extremely broadband terahertz generation via pulse compression of an Ytterbium laser amplifier10.1364/OE.27.032659 ↗
13. High field broadband THz generation in organic materials10.1080/09500340.2013.800242 ↗
14. Metrology of complex refractive index for solids in the terahertz regime using frequency domain spectroscopy10.1088/1681-7575/aae2c9 ↗
15. Terahertz Time-Domain and Low-Frequency Raman Spectroscopy of Organic Materials10.1366/14-07707 ↗
16. (2021, January 05). Supporting Data for “Metrology of Complex Refractive Index for Solids in the Terahertz Regime Using Frequency Domain Spectroscopy”. Available online: https://doi.org/10.5281/zenodo.1237819.
17. Thermal expansion of germanium and silicon at low temperatures10.1080/14786436508224956 ↗
18. Thermophysical properties of some key solids: An update10.1007/BF02575261 ↗
19. Optical Constants of Far Infrared Materials 2: Crystalline Solids10.1364/AO.12.000398 ↗
20. High-resolution study of composite cavity effects for p-Ge lasers10.1109/3.970898 ↗
21. Actively mode-locked p-Ge laser in Faraday configuration10.1063/1.125179 ↗
22. Refractive Indices of Germanium, Silicon, and Fused Quartz in the Far Infrared10.1364/AO.6.001889 ↗
23. Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon10.1364/JOSAB.21.001379 ↗
24. Duffy, J.A. (1990). Bonding, Energy Levels and Bands in Inorganic Solids, Longman Scientific & Technical.