Temperature Dependence Study of Electrical and Electro-Optical Performances of Midwave Infrared Ga-Free T2SL Barrier Photodetector
Source abstract
Abstract
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measurements and spectral photoresponse as a function of temperature. Analyses of these temperature dependence characterizations help us to improve the design of Ga-free T2SL MWIR XBn detectors.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Advanced Optical Sensing Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Electronics and Systems (IES), University Montpellier, CNRS, F-34000 Montpellier, France
Lynred, BP 21, 38113 Veurey-Voroize, France
The French Aerospace Lab-ONERA, Chemin de la Hunière, F-91761 Palaiseau, France
Funding
French “Investment for the Future” program · French ANR under project HOT-MWIR
References (36)
Show source-provided references
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