Quantitative Modeling of Near-Field Interactions in Terahertz Near-Field Microscopy
Source abstract
Abstract
Terahertz scattering-scanning near-field optical microscopy (THz s-SNOM), combining the best features of terahertz technology and s-SNOM technology, has shown unique advantages in various applications. Consequently, building a model to characterize near-field interactions and investigate practical issues has become a popular topic in THz s-SNOM research. In this study, a finite element model (FEM) is proposed to quantify the near-field interactions, and to investigate the edge effect and antenna effect in THz s-SNOM. Our results indicate that the proposed model can give us a better understanding of the near-field interactions and direct the parameter design of the probe for THz s-SNOM.
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Research context
OpenAlex topics: Near-Field Optical Microscopy · Plasmonic and Surface Plasmon Research · Microwave Engineering and Waveguides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Microwave Remote Sensing, National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Funding
Youth Innovation Promotion Association
References (28)
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