Complementary Barrier Infrared Detector Architecture for Long-Wavelength Infrared InAs/InAsSb Type-II Superlattice
Source abstract
Abstract
We describe the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provide an overview of progress in device architecture development for addressing them. Specifically, we have explored the complementary barrier infrared detector (CBIRD) that contains p-type InAs/InAsSb T2SLS absorbers for enhancing quantum efficiency, while also suppressing surface shunt current. We describe selected device results, and also provide references to additional results and more in-depth discussions.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Infrared Target Detection Methodologies · Advanced X-ray and CT Imaging
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, USA
Funding
National Aeronautics and Space Administration
References (53)
Show source-provided references
1. Proposal for strained type II superlattice infrared detectors10.1063/1.339468 ↗
2. Minority carrier lifetimes in ideal InGaSb/InAs superlattices10.1063/1.108480 ↗
3. Henini, M., and Razeghi, M. (2002). InAs/(GaIn)Sb superlattices: A promising material system for infrared detection. Handbook of Infrared Detection Technologies, Elsevier Science.
4. Henini, M., and Razeghi, M. (2002). GaSb/InAs superlattices for infrared FPAs. Handbook of Infrared Detection Technologies, Elsevier Science.10.1016/B978-185617388-9/50006-X ↗
5. Type-II Superlattice Infrared Detectors
6. Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials10.1063/1.3476352 ↗
7. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb10.1063/1.3671398 ↗
8. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice10.1063/1.4749842 ↗
9. Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices10.1063/1.4835055 ↗
10. Characterization of n-Type and p-Type Long-Wave InAs/InAsSb Superlattices10.1007/s11664-017-5621-7 ↗
11. nBn detector, an infrared detector with reduced dark current and higher operating temperature10.1063/1.2360235 ↗
12. Mid-wavelength high operating temperature barrier infrared detector and focal plane array10.1063/1.5033338 ↗
13. InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array with Significantly Higher Operating Temperature than InSb10.1109/JPHOT.2018.2877632 ↗
14. Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors10.1007/s11664-014-3169-3 ↗
15. Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials10.1063/1.4953035 ↗
16. Long Wavelength InAs/InAsSb Infrared Superlattice Challenges: A Theoretical Investigation10.1007/s11664-020-08349-7 ↗
17. Bond-orbital models for superlattices10.1103/PhysRevB.37.8215 ↗
18. Effective bond-orbital model for acceptor states in semiconductors and quantum dots10.1103/PhysRevB.40.9683 ↗
19. Description of bulk inversion asymmetry in the effective-bond-orbital model10.1103/PhysRevB.68.235319 ↗
20. Hole effective masses and subband splitting in type-II superlattice infrared detectors10.1063/1.4948387 ↗
21. Type-II superlattice hole effective masses10.1016/j.infrared.2016.10.014 ↗
22. Assessment of the Modulation Transfer Function in Infrared Detectors With Anisotropic Material Properties: Type-II Superlattices10.1109/TED.2019.2892589 ↗
23. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices10.1063/1.4760260 ↗
24. Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12 μm10.1063/1.2746943 ↗
25. Type II superlattice technology for LWIR detectors10.1117/12.2222776 ↗
26. Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe10.1007/s11664-011-1653-6 ↗
27. InAs/GaSb type-II superlattice infrared detectors: Future prospect10.1063/1.4999077 ↗
28. Fermi Level Position at Semiconductor Surfaces10.1103/PhysRevLett.10.471 ↗
29. Charge Accumulation at InAs Surfaces10.1103/PhysRevLett.76.3626 ↗
30. Empirical fit to band discontinuities and barrier heights in III–V alloy systems10.1063/1.106575 ↗
31. Ideal performance of and defect-assisted carrier recombination in MWIR and LWIR InAs/InAsSb superlattice detectors10.1117/12.2080580 ↗
32. Surface Leakage Mechanisms in III–V Infrared Barrier Detectors10.1007/s11664-016-4451-3 ↗
33. Surface conduction in InAs and GaSb
34. Maimon, S. (2010). Reduced Dark Current Photodetector. (7,687,871), U.S. Patent.
35. Klipstein, P.C. (2011). Depletionless Photodiode with Suppressed Dark Current and Method for Producing the Same. (7,928,473), U.S. Patent.
36. Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection10.1063/1.3258489 ↗
37. Development and Production of Array Barrier Detectors at SCD10.1007/s11664-017-5590-x ↗
38. Surface dark current mechanisms in III-V infrared photodetectors [Invited]10.1364/OME.8.001419 ↗
39. XBn barrier photodetectors based on InAsSb with high operating temperatures10.1117/1.3572149 ↗
40. XBn barrier photodetectors for high sensitivity and high operating temperature infrared sensors10.1117/12.778848 ↗
41. Nonequilibrium devices for infra-red detection10.1049/el:19850321 ↗
42. Non-equilibrium modes of operation for infrared detectors10.1016/0020-0891(86)90008-4 ↗
43. Operation and properties of narrow-gap semiconductor devices near room temperature using non-equilibrium techniques10.1088/0268-1242/6/12C/020 ↗
44. Generation-recombination processes and Auger suppression in small-bandgap detectors10.1016/0022-0248(90)90813-Z ↗
45. A high-performance long wavelength superlattice complementary barrier infrared detector10.1063/1.3177333 ↗
46. Exclusion, extraction, and junction placement effects in the complementary barrier infrared detector10.1063/1.4798551 ↗
47. Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement10.1063/5.0047937 ↗
48. Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors10.1007/s11664-022-09561-3 ↗
49. Ting, D.Z., Soibel, A., Khoshakhlagh, A., and Gunapala, S.D. (2020). Enhanced Quantum Efficiency Barrier Infrared Detectors. (10,872,987), U.S. Patent, U.S. Patent 2019/0013427, 2019.
50. “Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?10.1007/s11664-010-1084-9 ↗
51. Development of type-II superlattice long wavelength infrared focal plane arrays for land imaging10.1016/j.infrared.2022.104133 ↗
52. (2022, October 19). Hyperspectral Thermal Emission Spectrometer Website, Available online: https://hytes.jpl.nasa.gov.
53. Wright, R., Nunes, M., Lucey, P., Flynn, L., Gunapala, S., Ting, D., Rafol, S., Soibel, S., Ferrari-Wong, C., and Gabrieli, A. (August, January 28). HYTI: Thermal hyperspectral imaging from a CubeSat platform. Proceedings of the IGARSS 2019-2019 IEEE International Geoscience and Remote Sensing Symposium, Yokohama, Japan.10.1109/IGARSS.2019.8899887 ↗