Low-Temperature Direct Bonding of SiC to Si via Plasma Activation
Source abstract
Abstract
We investigated the low-temperature direct bonding of SiC/Si via O2 plasma activation. After optimization, a high bonding efficiency of over 90% was obtained. Surface activation was achieved via reactive ion etching (RIE) O2 plasma for 30 s without significant bombardment damage. A smooth and void-free interface was observed by transmission electron microscopy (TEM), while a significant amorphous oxide layer was also detected. By increasing the annealing temperature from 150 to 300 ∘C, the amorphous layer decreased drastically from 48 nm to 11 nm. Based on systematic experiments and analysis, the mechanism of SiC/Si low-temperature plasma-activated bonding was discussed.
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Research context
OpenAlex topics: 3D IC and TSV technologies · Copper Interconnects and Reliability · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Funding
National Key Research and Development Program
References (19)
Show source-provided references
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