Recent Advances in Black Silicon Surface Modification for Enhanced Light Trapping in Photodetectors
Source abstract
Abstract
The intricate nanostructured surface of black silicon (BSi) has advanced photodetector technology by enhancing light absorption. Herein, we delve into the latest advancements in BSi surface modification techniques, specifically focusing on their profound impact on light trapping and resultant photodetector performance improvement. Established methods such as metal-assisted chemical etching, electrochemical etching, reactive ion etching, plasma etching, and laser ablation are comprehensively analyzed, delving into their mechanisms and highlighting their respective advantages and limitations. We also explore the impact of BSi on the emerging applications in silicon (Si)-based photodetectors, showcasing their potential for pushing the boundaries of light-trapping efficiency. Throughout this review, we critically evaluate the trade-offs between fabrication complexity and performance enhancement, providing valuable insights for future development in this rapidly evolving field. This knowledge on the BSi surface modification and its applications in photodetectors can play a crucial role in future implementations to substantially boost light trapping and the performance of Si-based optical detection devices consequently.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Microelectronics and Semiconductor Institute, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia
Future Communication Technology Institute, King Abdulaziz City for Science and Technology (KACST), Riyadh 12354, Saudi Arabia
Advanced Materials Institute, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia
Department of Electrical Engineering, College of Engineering, University of South Florida, Tampa, FL 33620, USA
Funding
Development, and Innovation Authority (RDIA)—Kingdom of Saudi Arabia—
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