Electrical Resistance of W/Si–Ge (0–75 wt % Ge) Contacts
Source abstract
Abstract
The electrical resistance of the contact between tungsten and silicon–germanium alloys of different compositions was measured as a function of temperature. The results indicate that the room-temperature contact resistance increases with increasing Ge content, annealing temperature, and annealing time. With increasing measuring temperature, the contact resistance drops to a level of the experimental error. Annealing at 1070 K tends to break down both W/p-Si–Ge and W/n-Si–Ge contacts.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Silicon and Solar Cell Technologies
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References (9)
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