DataVXInorganic MaterialsPaper
journal article·2001-02

Transient Behavior of Photoconductivity in Ge–Si Single Crystals

M. Ya. Bakirov, R. V. Shakhbazova

Inorganic Materials· Volume 37· Issue 2
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Source abstract

Abstract

The transient behavior of photoconductivity in single crystals of Ge–Si solid solutions was studied. The parameters of sticking and recombination centers were determined. The results suggest that impurity agglomerates and silicon precipitates act as recombination and sticking centers, respectively.
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Research context

OpenAlex topics: Thermography and Photoacoustic Techniques

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References (8)

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1. Morton, G.A., Schultz, M.N., and Harty, W.E., Infrared Photoconductive Detectors Using Impurity Activated Germanium-Silicon Alloys, RCA Rev., 1959, vol. 20, no. 4, pp. 593–634.
2. Bakirov, M.Ya. and Mamedov, V.S., Photoconductivity of Ge-Si Single Crystals, Izv. Akad. Nauk SSSR, Neorg. Mater., 1978, vol. 14, no. 7, pp. 1201–1204.
3. Tairov, V.I., Ismailov, I.M., and Khalilova, E.I., Photoconductivity of Copper-Doped Ge-Si Solid Solutions, Fiz. Tekh. Poluprovodn. (Leningrad), 1978, vol. 12, no. 6, pp. 1208–1211.
4. Bakirov, M.Ya., Mamedov, V.S., Tairov, V.I., and Ismailov, I.M., Photoconductivity of Manganese-Doped Ge-Si Single Crystals, Fiz. Tekh. Poluprovodn. (Leningrad), 1982, vol. 16, no. 2, pp. 317–319.
5. Bakirov, M.Ya. and Mamedov, M.A., Photoelectric Properties of Ge-Si Amorphous Films, Neorg. Mater., 1997, vol. 33, no. 4, pp. 395–397 [Inorg. Mater. (Engl. Transl.), vol. 33, no. 4, pp. 327-329].
6. Bakirov, M.Ya., Local Inhomogeneities in Single Crystals of Ge-Si Solid Solutions Neorg. Mater., 1996, vol. 32, no. 5, pp. 526–528 [Inorg. Mater. (Engl. Transl.), vol. 32, no. 5, pp. 467-469].
7. Bakirov, M.Ya. and Shakhbazova, R.V., Photoconductivity of Ge1 - x Six Single Crystals in the Range 115-300 K, Neorg. Mater., 2000, vol. 36, no. 2, pp. 138–141 [Inorg. Mater. (Engl. Transl.), vol. 36, no. 2, pp. 94-96].10.1007/BF02758002 ↗
8. Ryvkin, S.M., Fotoelektricheskie yavleniya v poluprovodnikakh (Photoelectric Phenomena in Semiconductors), Moscow: Fizmatizgiz, 1963.