Optimized Luminescent Properties of GaSb-Based Heterostructures Produced by Liquid-Phase Epitaxy
Source abstract
Abstract
A procedure is proposed for optimizing the luminescent properties of GaSb epilayers by codoping with a few impurities during the liquid-phase epitaxy growth of heterostructures. This approach is also applicable to other III–V compounds.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Advanced Research in Systems and Signal Processing
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References (6)
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1. Arbenina, V.V., Arshavskii, A.N., Skakovskii, S.I., et al., Photoluminescence of GaSb Epilayers Heavily Doped with Amphoteric Impurities, Fiz. Tekh. Poluprovodn. (Leningrad), 1986, vol. 20, no. 1, pp. 104–110.
2. Arbenina, V.V., Arshavskii, A.N., Skakovskii, S.I., and Ufimtsev, V.B., Behavior of Rare-Earth Dopants in Epitaxial Growth of GaSb, in Svoistva legirovannykh poluprovodnikovykh materialov (Properties of Doped Semiconductors), Moscow: Nauka, 1990, pp. 33–38.
3. Arbenina, V.V., Daricheva, O.E., and Pshenichnyi, D.A., Luminescent Characteristics of Rare-Earth-Doped GaSb Epitaxial Layers, Neorg. Mater., 1995, vol. 31, no. 2, pp. 278–281 [Inorg. Mater. (Engl. Transl.), vol. 31, no. 2, pp. 260–262].
4. Ufimtsev, V.B. and Arbenina, V.V., Effect of Rare-Earth Additives on Crystallization of III–V Compounds from Gallium Fluxes, Neorg. Mater., 1996, vol. 32, no. 10, pp. 1171–1177 [Inorg. Mater. (Engl. Transl.), vol. 32, no. 10, pp. 1025–1029].
5. Arbenina, V.V., Akchurin, R.Kh., Zhegalin, V.A., et al., Reduced Concentration of Background Impurities in Indium Antimonide Epilayers, Vysokochist. Veshchestva, 1990, no. 2, pp. 186–191.
6. Arbenina, V.V. and Yakimova, E.E., Distribution of Ytterbium in GaAs〈Yb〉and GaAs〈Yb,Ge〉Epitaxial Layers, Neorg. Mater., 1998, vol. 34, no. 1, pp. 9–12 [Inorg. Mater. (Engl. Transl.), vol. 34, no. 1, pp. 3–6].