Growth of controlled- thermopower- anisotropy cadmium antimonide crystals
Source abstract
Abstract
Experimental data are presented which demonstrate that the thermopower anisotropy of CdSb crystals can be increased almost threefold, to obtain a difference in the room-temperature thermopower tensor components of up to 750 µV/K, by annealing the seed or passing an electric current through it and by optimizing zone-melting conditions. This procedure is used to grow CdSb crystals for thermoelectric converters employed in commercial illumination radiometers.
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
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References (14)
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