Electric-Field-Induced Impurity Effects in p-GaSe Single Crystals
Source abstract
Abstract
Electric-field-induced impurity photoconductivity and spontaneous dark current pulsations have been detected in nominally undoped and rare-earth (gadolinium and erbium) doped (NREE ≤ 0.1 at %) p-type gallium selenide (p-GaSe) single crystals and investigated at electric voltages ensuring injection in the crystals. The results demonstrate that both effects are directly due to changes in the charge state of trap levels in the band gap of p-GaSe by injected charge carriers, are independent of the chemical nature of the dopant, and are only determined by the doping level. In higher resistivity crystals, undoped and doped to NREE ≤ 0.01 at %, these effects are strongly influenced by random macroscopic defects as well.
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Research context
OpenAlex topics: Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films · Crystal Structures and Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
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