Crystal-chemical models of the defect system in nonstoichiometric and oxygen-doped ZnSe crystals
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Abstract
Quasi-crystal-chemical formulas that take into account the generation of point defects and defect complexes have been proposed for nonstoichiometric, self-doped, and oxygen-doped n - and p -type ZnSe crystals. The defect densities and electron, hole, and Hall carrier concentrations have been evaluated as functions of nonstoichiometry and dopant (Zn, Se, and O) concentration, and conditions have been identified for producing zinc selenide with a given conductivity type and tailored carrier concentration.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor Quantum Structures and Devices
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References (12)
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