Growth of niobium oxide films on single-crystal silicon
Source abstract
Abstract
200-nm-thick niobium films grown on single-crystal silicon wafers by magnetron sputtering have been oxidized by annealing in flowing oxygen. X-ray diffraction examination revealed the metal-like phase Nb 6 O in the as-deposited films. Annealing in flowing oxygen for 1 h led to the formation of tetragonal NbO 2 at 570 K and hexagonal Nb 2 O 5 at temperatures above 770 K. The grain size and surface roughness of the films were evaluated using atomic force microscopy.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
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