Kinetics and mechanism of reaction between silicon carbide and silica
Source abstract
Abstract
The kinetics and mechanism of reaction between SiO2 and SiC are studied. The reaction rate is shown to be limited by the carbon diffusion from the SiC bulk to the SiC/SiO2 interface, where carbon reacts with the SiO and oxygen resulting from SiO2 decomposition. Equations are presented which describe the time variation of SiC conversion and the temperature variation of the carbon diffusivity in SiC.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Silicon Carbide Semiconductor Technologies · Aluminum Alloys Composites Properties
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References (4)
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2. Shei, A., Chemistry of Ferrosilicon Production,Norw. J. Chem., Mining Metall., 1967, vol. 27, no. 8/9, pp. 152–158.
3. Gel’d, P.V. and Esin, O.A., inIssledovaniya pri vysokikh temperaturakh (High-Temperature Investigation Techniques), Moscow: Nauka, 1967, p. 484.
4. Serov, G.V., Mizin, V.G., Tolstoguzov, N.V.,et al., Sovershenstvovanie proizvodstva ferrosilitsiya na Kuznetskom zavode ferrosplavov (Developments in the Ferrosilicon Production at the Kuznetsk Ferroalloy Works), Kemerovo, 1969, issue 2, p. 105.